Metal oxide semiconductor field effect transistor and manufacturing method thereof
An oxide semiconductor and field effect transistor technology, which is applied in the field of improving metal oxide semiconductor field effect transistors and their manufacturing, and can solve the problems of high thermal stress, increased connection leakage rate, and decreased device performance.
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[0030] The root cause of SiGe stress relaxation is the difference in lattice constants between SiGe and Si. The lattice constant of Ge is 5.6 angstroms, the lattice constant of Si is 5.4 angstroms, and the range of the lattice constant of epitaxial SiGe is between 5.4 angstroms and 5.6 angstroms. The higher the Ge concentration, the greater the difference between the lattice constant of SiGe and the lattice constant of Si, and the greater the difference, the greater the stress on the interface between SiGe and Si, and the greater the stress will be. Will cause SiGe stress relaxation.
[0031] Aiming at the root cause of SiGe stress relaxation, the solution adopted by the present invention is to form a buffer layer between SiGe and the silicon substrate. The lattice constant of the buffer layer is close to the lattice constant of Si of 5.4 angstroms on the side close to the Si substrate. The side close to the SiGe layer is close to the lattice constant of SiGe. The internal latt...
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