Group iii nitride semiconductor light-emitting device

一种氮化物半导体、发光器件的技术，应用在半导体器件、电固体器件、电气元件等方向，能够解决光提取性能低下等问题

Active Publication Date: 2011-04-20
TOYODA GOSEI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such light-emitting devices have a problem of poor light extraction performance due to the absorption of light by the Si substrate.

Method used

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  • Group iii nitride semiconductor light-emitting device
  • Group iii nitride semiconductor light-emitting device
  • Group iii nitride semiconductor light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0082] figure 1 is a cross-sectional view of the structure of the light emitting device 100 according to Embodiment 1, figure 2 is a top view of the light emitting device 100 . like figure 2 As shown, the light emitting device 100 has a square shape viewed from above. like figure 1 As shown, the light-emitting device 100 includes a substrate 101; a low-melting-point metal layer 102 formed on the substrate 101; a p-electrode 103 bonded to the substrate 101 via the low-melting-point metal layer 102; - p-type layer 104 , active layer 105 and n-type layer 106 on electrode 103 ; and n-electrode 107 formed on n-type layer 106 .

[0083] The base 101 may be a conductive substrate formed of, for example, Si, GaAs, Cu, or Cu—W. The low melting point metal layer 102 may be a eutectic metal layer, such as an Au—Sn layer, Au—Si layer, Ag—Sn—Cu layer or Sn—Bi layer. Alternatively, the low melting point metal layer 102 may be, for example, an Au layer, a Sn layer, or a Cu layer, alt...

Embodiment approach 2

[0115] In Embodiment 2, components having the same functions as those described in Embodiment 1 are denoted by the same reference numerals. Figure 9 is a top view of a light emitting device 600 according to Embodiment 2, Figure 10 Yes Figure 9 A cross-sectional view of the device taken along line A-A. like Figure 9 As shown, the light emitting device 600 has a square shape viewed from above. like Figure 10 As shown, the light-emitting device 600 includes a substrate 101; a low-melting-point metal layer 102 formed on the substrate 101; a p-electrode 103 bonded to the substrate 101 via the low-melting-point metal layer 102; - p-type layer 104, active layer 105 and n-type layer 106 on electrode 103; n-pad electrode 607; and auxiliary electrode 609.

[0116] The base 101 may be a conductive substrate formed of, for example, Si, GaAs, Cu, or Cu—W. The bottom electrode 117 is formed on the bottom surface 101b of the substrate 101 (i.e., the surface on the side opposite to...

Embodiment approach 3

[0140] In Embodiment 3, components having the same functions as those described in Embodiment 1 or 2 are denoted by the same reference numerals. Figure 15 is a top view of a light emitting device 700 according to Embodiment 3, Figure 16 Yes Figure 15 A cross-sectional view of the device taken along line A-A. like Figure 16 As shown, the light emitting device 700 includes a ceramic substrate 701; a low melting point metal layer formed on the ceramic substrate 701; a p-electrode 103 bonded to the ceramic substrate 701 via the low melting point metal layer 102; formed of a group III nitride semiconductor And p-type layer 104 , active layer 105 , and n-type layer 106 ; n-pad electrode 707 ; auxiliary electrode 709 and p-pad electrode 714 are sequentially stacked on p-electrode 103 . like Figure 15 As shown in , the light emitting device 700 has a square shape viewed from above, and the n-pad electrode 707 and the p-pad electrode 714 are formed on the same surface.

[014...

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Abstract

A Group III nitride semiconductor light-emitting device includes an electrically conductive support; a p-electrode provided on the support; a p-type layer, an active layer, and an n-type layer, which are formed of a Group III nitride semiconductor and are sequentially provided on the p-electrode; an n-electrode which is connected to the n-type layer; a first trench extending from the surface of the p-type layer on the p-electrode's side to reach the n-type layer; an auxiliary electrode which is in contact with the surface of the n-type layer serving as the bottom of the first trench, but is not in contact with the side walls of the first trench; and an insulating film which exhibits light permeability and covers the auxiliary electrode and the bottom and side walls of the first trench. According another embodiment, the light-emitting device comprises a second trench which is provided in a region facing a portion of the auxiliary electrode in a direction perpendicular to the main surface of the device, and which has a depth extending from the surface of the n-type layer on the side opposite the side of the p-electrode to the auxiliary electrode; and the n-electrode is formed of only a pad portion and is provided on a portion of the auxiliary electrode exposed through the second trench.

Description

technical field [0001] The present invention relates to a III-nitride semiconductor light emitting device comprising an epitaxially grown layer removed from a growth substrate and bonded to a substrate by a lift-off process. The invention also relates to a light emitting device comprising a base formed of a ceramic substrate. Background technique [0002] Generally, a sapphire substrate is used as a growth substrate of a Group III nitride semiconductor. However, sapphire has problems with electrical and thermal conductivity. For example, a Group III nitride semiconductor light emitting device having a device structure formed on a sapphire substrate exhibits poor linearity in a high current region or poor durability in long-term operation. Sapphire has no cleavage properties and exhibits high physical and chemical strength. Therefore, when manufacturing a light emitting device using a sapphire substrate, dividing the device into chips requires complicated processes such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/38H01L33/20H01L33/46
CPCH01L33/44H01L33/38H01L2924/0002H01L2924/00
Inventor 上村俊也伊藤润
Owner TOYODA GOSEI CO LTD
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