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Characteristic dimension proximity pattern

A feature size and approximation technology, applied in the field of semiconductor manufacturing lithography, can solve problems such as poor ability

Inactive Publication Date: 2011-04-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The lack of this part of the data is also one of the reasons why the existing methods for detecting the uniformity of the grid size are poor.

Method used

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Embodiment Construction

[0031] In order to make the object, technical solution, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0032] The present invention has been described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagram showing the structure will not be partially enlarged according to the general scale, which should not be used as a limitation of the present invention. In addition, in actual production In , the three-dimensional space dimensions of length, width and depth should be included.

[0033] The core idea of ​​the present invention is to make a CD TP Pattern on the photomask, and the CD TP Pattern is different from both the CDU pattern and the CD Bar, because both the CDU pattern and the CD Bar are OPC-modified patterns, and the present invention The TP...

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Abstract

The invention discloses a characteristic dimension proximity pattern which is manufactured on a cutting path of a photomask, evenly distributed in the range of an exposure unit and used for controlling the evenness of characteristic dimensions in the exposure unit; and the characteristic dimension proximity CD TP pattern comprises a pattern subjected to optical proximity correction OPC and a pattern not subjected to OPC. The characteristic dimension approximation pattern displays more and quite complete written-out characteristic dimension data and controls the evenness of the characteristic dimensions in the exposure unit.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing lithography, in particular to a feature size approximation pattern. Background technique [0002] At present, in the manufacture of integrated circuits, in order to transfer the pattern of the integrated circuit to the wafer (wafcr) smoothly, the circuit pattern must first be designed as a mask pattern, and then the mask pattern is exposed from the surface of the mask. The machine is transferred to the wafer. The wafer includes, but is not limited to, materials such as silicon, silicon germanium (SiGe), silicon-on-insulator (SOI), and various combinations thereof. With the development of Very Large Scale Integrated circuits (VLSI), there has been an increasing demand for reducing pattern size and increasing layout density. [0003] Usually each wafer includes multiple exposure units (shots), and the pattern in each shot on the entire wafer is the same, that is, the wafcr is divided int...

Claims

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Application Information

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IPC IPC(8): G03F1/14G03F1/36
Inventor 武咏琴
Owner SEMICON MFG INT (SHANGHAI) CORP