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Semiconductor device and power converter using it

A semiconductor, conductive type technology, applied in the field of semiconductor devices and power conversion devices, can solve the problems of improving the characteristics of freewheeling diodes, deterioration of reverse recovery characteristics, and increase of forward voltage, and achieves low loss, small current change rate, The effect of jump-off voltage reduction

Active Publication Date: 2011-04-27
HITACHI LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] But when Figure 20 In the diode, further injecting charges and reducing the forward voltage drop will deteriorate the reverse recovery characteristics. On the contrary, if the reverse recovery characteristics are improved by suppressing the injection of charges, there is a problem that the forward voltage becomes larger and the loss increases, which is difficult Through this structure, the characteristics of the freewheeling diode are further improved

Method used

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  • Semiconductor device and power converter using it
  • Semiconductor device and power converter using it
  • Semiconductor device and power converter using it

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Embodiment Construction

[0078] Embodiments of the present invention will be described in detail below using the drawings.

[0079] figure 1 An example of a semiconductor device to which the present invention is applied and a power conversion device using the same is shown. exist figure 1 In , a pair of power conversion devices for the upper and lower arms is shown. The present invention is characterized in that the freewheeling diode 100 is functionally divided into a pn diode and a Schottky diode, and has a gate for selecting them. The freewheeling diode 100 described above is called a gated diode. By using the gated diode 100, the pn diode operates during conduction, and operates as a Schottky diode during reverse recovery, so that the advantages of both are effectively utilized, and the conduction loss and reverse recovery loss are reduced. And the suppression of the jump voltage, and realize the obvious low loss and low noise at the same time.

[0080] exist figure 2 In , the drive seque...

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Abstract

The invention provides a semiconductor device and a power converter using it. The prior arts have the problems that: conventional freewheeling diode with PN junction having a short service life is used in power converter, the forward voltage and the conduction loss are all large; in addition, the reverse recovery current and switch loss are large in reverse recovery process; thereby the loss of the power converter is large. In the invention, when the current flows forward, it is caused to flow to the pn diode with low forward voltage; and in reverse recovery process, the reverse recovery current is caused to flow to the Schottky diode with small reverse recovery current. In addition, the device of the invention has a pn diode / Schottky diode switching unit. By reducing the forward voltage of the freewheeling diode and reducing the reverse recovery loss, the invention can provide a semiconductor device with less loss and a power converter using it.

Description

technical field [0001] The present invention relates to a semiconductor device and a power conversion device using the semiconductor device, and particularly to a semiconductor device having a flywheel diode and a power conversion device using the semiconductor device. Background technique [0002] Many inverters and converters are used in recent energy-saving or new-energy power conversion devices, and their widespread use is essential in order to realize a low-carbon society. Figure 19 An example of an inverter that controls the variable speed of the motor 950 to save energy is shown. Using an IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) 700 which is a type of power semiconductor, the electric energy from the DC power supply Vcc is converted into AC at a desired frequency, and the rotation speed of the motor 950 is variable. The motor 950 is a three-phase motor and has U-phase 910 , V-phase 911 and W-phase 912 inputs. When the gate circuit ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L29/861H01L29/868
CPCH01L29/7395H01L29/7391H01L27/0664H03K17/164H03K17/168H03K17/74H03K2217/0036
Inventor 森睦宏
Owner HITACHI LTD
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