Membrane electroluminescent device and preparation method thereof

Abstract

The invention relates to a membrane electroluminescent device, which comprises an indium tin oxide (ITO) conducting glass layer, a first insulating layer, a luminescent layer, a second insulating layer and a metal electrode layer which are arranged sequentially, wherein a metal layer with an aperiodic micro-nano structure is arranged between the luminescent layer and the second insulating layer; surface plasma effect can be generated on an interface between the metal layer with the aperiodic micro-nano structure and the luminescent layer; and by the plasma effect, the luminescent effect of the luminescent layer can be enhanced to increase luminescent intensity and improve the electroluminescent efficiency of the device. The invention also provides a preparation method for the membrane electroluminescent device correspondingly.

Description

technical field

[0001] The invention relates to the technical field of optoelectronics, and more specifically relates to a thin film electroluminescence device and a preparation method thereof. Background technique

[0002] Compared with display devices such as liquid crystal display (LCD), plasma display panel (PDP), light emitting diode (LED), and field emission display (FED), thin film electroluminescent (TFEL) display devices have active luminescence, full solidification, Small size, flat plate, wide viewing angle, wide operating temperature range, high pixel resolution, short response time, anti-vibration and other characteristics, can be applied to the display requirements of various occasions. Traditional thin film electroluminescent devices adopt the MISIM structure (metal-insulating layer-semiconductor light-emitting layer-insulating layer-metal), which is usually deposited on a transparent glass substrate, and metal aluminum and ITO are used as the upper and lower ...

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