Synthesis method of hafnium tetraethoxide

A technique for the synthesis of tetraethoxyhafnium, which is applied in the field of synthesis of tetraethoxyhafnium, can solve problems such as troublesome operation, and achieve the effect of reducing toxicity and simple operation

Active Publication Date: 2011-05-04
马鞍山南大高新技术研究院有限公司
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  • Application Information

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Problems solved by technology

This method needs to be carried out in the presence of ammonia gas, which brings certain troubles to the operation

Method used

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  • Synthesis method of hafnium tetraethoxide

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Embodiment 1

[0019] Synthesis of Tetraethoxyhafnium

[0020] (1) Under a nitrogen atmosphere, add 5.8 g of sodium cut into small pieces and 100 mL of ethanol into a 500 mL three-necked bottle, stir mechanically until the sodium is completely reacted, and then cool to room temperature.

[0021] (2) Add 16 grams of hafnium tetrachloride in batches to the above reaction system, keeping the temperature of the reaction system not higher than 60°C. After adding the hafnium tetrachloride, keep the temperature of the reaction system between 40-65° C., react for 2-8 hours under the condition of mechanical stirring, and then evaporate the remaining ethanol to dryness.

[0022] (3) Then add 150mL of toluene to the solid, stir and filter, the filtrate is concentrated, a white solid is precipitated, and dried in vacuum to obtain a white crystal with a yield of 80-85%wt. The product has passed the identification of H NMR spectrum. 1 H NMR (CDCl 3 , 300 MHz): 4.08-4.28 (m, 8H), 1.19-1.34 (m, 12H).

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Abstract

The invention relates to a synthesis method of hafnium tetraethoxide, which comprises the following steps: (1) in a nitrogen atmosphere, adding 5.8g of diced sodium and 100mL of ethanol into a 500mL three-necked bottle, mechanically stirring until the sodium completely reacts, and cooling to room temperature; adding 16g of hafnium tetrachloride into the reaction system in batches while keeping the temperature of the reaction system not higher than 60 DEG C; after adding the hafnium tetrachloride, keeping the temperature of the reaction system at 40-65 DEG C, reacting for 2-8 hours under the condition of mechanical stirring, and evaporating out the residual ethanol to obtain a dry solid; and adding 150mL of phenylmethane to the solid, stirring, filtering, concentrating the filtrate to precipitate white solids, and drying the white solids in vacuum to obtain white crystals. The yield of the method is 80-85%.

Description

[0001] technical field [0002] The invention relates to metal organic complexes in the field of chemistry, in particular to a synthesis method of hafnium tetraethoxide. [0003] Background technique [0004] The high-k material is based on an element called hafnium, rather than silicon dioxide, and the transistor gate is made of two metallic elements instead of silicon. Hafnium is the 72nd element in the periodic table and is also a metallic material. It is silver-gray, has high toughness and corrosion resistance, and has chemical properties similar to zirconium. The use of hafnium instead of silicon dioxide in 45nm transistors is because hafnium is a thicker material that can significantly reduce leakage while maintaining high capacitance to achieve high transistor performance. This innovation led to our new generation of 45nm processors and laid the foundation for our future smaller processors. [0005] About what is the high dielectric constant and field effect of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C31/28C07C29/68
Inventor 韩建林潘毅虞磊孔令宇曹季
Owner 马鞍山南大高新技术研究院有限公司
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