Method for preparing highly (100) oriented BiFeO3 films on Si substrate

A high-orientation, substrate technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of poor film grain density, small substrate stress constraints, and large lattice mismatch and other problems, to achieve the effect of dense arrangement, easy adjustment of process parameters, and improvement of magnetoelectric performance

Inactive Publication Date: 2011-05-11
BEIJING UNIV OF TECH
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Problems solved by technology

Most of the substrate materials currently used are expensive SrTiO 3 (100), SrTiO 3 (111), LaAlO 3 (100), LaAlO 3 (111), etc., (111)-oriented substrates are more expensive than (100)-oriented substrates, and such substrates are not compatible with large-scale semiconductor production processes; while the commonly used Si/SiO 2 /TiO 2 /Pt substrate, due to Pt and BiFeO 3 The lattice mismatch is large, and the preferred orientation BiFeO cannot be obtained on it 3 thin film; in addition, in numerous bottom electrode materials La 0.5 Sr 0.5 CoO 3 , YBa 2 Cu 3 o 7-x , SrRuO 3 and LaNiO 3 Medium, LaNiO 3 It

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  • Method for preparing highly (100) oriented BiFeO3 films on Si substrate
  • Method for preparing highly (100) oriented BiFeO3 films on Si substrate
  • Method for preparing highly (100) oriented BiFeO3 films on Si substrate

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Embodiment 1

[0026] a) Pretreatment of the Si(100) substrate: the substrate is thoroughly cleaned in an ultrasonic cleaner with toluene, acetone, and ethanol in sequence, then rinsed with deionized water, and soaked in ethanol for later use;

[0027] b) Using the pulsed laser deposition method, using self-made LaNiO 3Target material, on the above substrate, using pulsed laser deposition method, on the Si(100) substrate, the substrate temperature is 750°C, the working oxygen pressure is 5Pa, the laser energy is 400 mJ / pulse, and the pulse frequency is 5Hz. Target base distance 50mm, deposit LaNiO 3 film. The XRD pattern of the obtained film is as follows figure 1 As shown, the film exhibits a high (100) orientation. Film morphology as figure 2 As shown, the thickness of the film is 400nm, the particle size is about 50nm, and the columnar grains are arranged densely and uniformly.

[0028] c) Using the pulsed laser deposition method, using self-made BiFeO 3 Target material, in LaNiO ...

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Abstract

The invention discloses a method for preparing highly (100) oriented BiFeO3 films on a Si substrate, which belongs to the technical field of functional material preparation. The method comprises the following steps: the Si substrate is pre-treated; a highly oriented LaNiO3 film is prepared on the substrate by adopting the pulsed laser deposition method and a LaNiO3 target material; and a highly oriented BiFeO3 film is prepared on the LaNiO3 film by adopting the pulsed laser deposition method and a BiFeO3 target material. The product prepared by adopting the method provided by the invention has good compatibility, uniform film grain sizes, compactness in arrangement, high crystallinity and good orientation.

Description

technical field [0001] The invention relates to a method for depositing high (100) orientation LaNiO on a Si substrate 3 Bottom electrode thin film, and deposit high (100) orientation BiFeO on the electrode 3 The thin film method belongs to the technical field of functional material preparation. Background technique [0002] A multiferroic material is a kind of material with the coexistence of ferroelectricity and magnetism due to the electrical and magnetic order, and has the property of magnetoelectric coupling. The coexistence of ferroelectricity and magnetism allows this material to induce a magnetic phase transition by an electric field, and a magnetic field can also induce ferroelectric polarization. This property is called the magnetoelectric effect. [0003] Multiferroic materials are very important advanced functional materials, widely used in electronic devices such as transducers, sensors, and sensors, and occupy a dominant position in high-tech fields such as s...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/08C23C14/58
Inventor 张铭王光明李廷先严辉宋雪梅王如志侯育冬朱满康汪浩王波
Owner BEIJING UNIV OF TECH
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