Method for preparing highly (100) oriented BiFeO3 films on Si substrate

Abstract

The invention discloses a method for preparing highly (100) oriented BiFeO3 films on a Si substrate, which belongs to the technical field of functional material preparation. The method comprises the following steps: the Si substrate is pre-treated; a highly oriented LaNiO3 film is prepared on the substrate by adopting the pulsed laser deposition method and a LaNiO3 target material; and a highly oriented BiFeO3 film is prepared on the LaNiO3 film by adopting the pulsed laser deposition method and a BiFeO3 target material. The product prepared by adopting the method provided by the invention has good compatibility, uniform film grain sizes, compactness in arrangement, high crystallinity and good orientation.

Description

technical field [0001] The invention relates to a method for depositing high (100) orientation LaNiO on a Si substrate 3 Bottom electrode thin film, and deposit high (100) orientation BiFeO on the electrode 3 The thin film method belongs to the technical field of functional material preparation. Background technique [0002] A multiferroic material is a kind of material with the coexistence of ferroelectricity and magnetism due to the electrical and magnetic order, and has the property of magnetoelectric coupling. The coexistence of ferroelectricity and magnetism allows this material to induce a magnetic phase transition by an electric field, and a magnetic field can also induce ferroelectric polarization. This property is called the magnetoelectric effect. [0003] Multiferroic materials are very important advanced functional materials, widely used in electronic devices such as transducers, sensors, and sensors, and occupy a dominant position in high-tech fields such as s...

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Problems solved by technology

Most of the substrate materials currently used are expensive SrTiO 3 (100), SrTiO 3 (111), LaAlO 3 (100), LaAlO 3 (111), etc., (111)-oriented substrates are more expensive than (100)-oriented substrates, and such substrates are not compatible with large-scale semiconductor production processes; while the commonly used Si / SiO 2 / TiO 2 / Pt substrate, due to Pt and BiFeO 3 The lattice mismatch is large, and the preferred orientation BiFeO cannot be obtained on it 3 thin film; in addition, in numerous bottom electrode materials La 0.5 Sr 0.5 CoO 3 , YBa 2 Cu 3 o 7-x , SrRuO 3 and LaNiO 3 Medium, LaNiO 3 It is a pseudocubic perovskite structure with simple structure, low raw material price and low resistivity; but the preparation of pure phase LaNiO 3 The target material is relatively difficult, and it is also difficult to deposit LaNiO with high crystallinity and high preferred orientation 3 film

[0007] In the preparation of preferred orientation BiFeO 3 In terms of thin film method, the chemical method is relatively simple in terms of process, but the grain density of the obtained film is poor, and it is less constrained by the stress of the substrate, so it is difficult to obtain a film with high preferred orientation

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