The invention relates to a
gallium nitride membrane epitaxial growth structure and a method. The structure is as follows: an
SOI substrate is provided with an AIN
nucleation layer which is provided with a low V / III ratio GaN
cushioning layer; and the low V low V / III ratio / III ratio
cushioning layer is provided with a GaN single-
crystal membrane. The method is as follows: the
SOI substrate is selected and arranged inside an MOCVD
reaction chamber; the
SOI substrate is roasted and cooled down, and then trimethyl aluminum is added to the SOI substrate so as to grow the AIN
nucleation layer; the trimethyl aluminum is closed and cooled down, and then
ammonia gas is injected to the rimethyl aluminum so as to grow the GaN
cushioning layer; the GaN cushioning layer is heated up and injected with
ammonia gas and trimethyl
gallium so as to grow the GaN single-
crystal membrane; finally, the temperature is cooled down to
room temperature. The
gallium nitride membrane epitaxial growth structure and the method have the advantages that: when the low V / III ratio GaN cushioning layer is converted into quasi-two-dimensional growth from three-dimensional growth with prolonging a GaN membrane,
crystal grain is fully grown up so as to reduce crystal
grain density, release mismatch stress and increase the
mass of a GaN membrane crystal; moreover, the mismatch stress of the SOI substrate GaN single-crystal membrane is reduced by means of the low V / III ratio GaN cushioning layer, thereby reducing
dislocation density and increasing crystal quality.