Microwave millimeter wave ultra-wide band low phase shift six-figure attenuator
A digital attenuator, millimeter-wave technology, applied in electrical components, multi-terminal pair networks, impedance networks, etc., can solve the problem of large voltage standing wave ratio at the input and output terminals of the attenuation state, circuit topology and process implementation path defects, electrical performance indicators It is difficult to meet the requirements and other problems, and achieve the effects of high attenuation accuracy, excellent comprehensive electrical performance indicators, and simple design.
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Embodiment 1
[0022] Example 1. combine figure 1 , figure 2 , the microwave and millimeter wave ultra-broadband low-phase-shift six-digit digital attenuator of the present invention, the 0.5dB attenuation unit adopts a pseudo-structure high electron mobility transistor as an ultra-broadband switch control device, and adopts a T-shaped topology.
[0023] figure 2 The scheme consists of a microwave and millimeter wave input port (Pa1), a microwave and millimeter wave output port (Pa2), a pseudostructure high electron mobility transistor (Fa1), three microstrip lines (Ma1, Ma2, Ma3) and two Composed of only resistors (Ra1, Ra2), the microwave and millimeter wave input port Pa1 is connected to one end of the microstrip line Ma1, the other end of the microstrip line Ma1 is connected to one end of the microstrip line Ma2, and the other end of the microstrip line Ma2 is connected to the microwave and millimeter wave output Port Pa2, the microstrip line Ma1 is connected to one end of the micro...
Embodiment 2
[0024] Example 2. combine figure 1 , image 3 , the microwave and millimeter wave ultra-broadband low-phase-shift six-digit digital attenuator of the present invention, the 1dB attenuation unit adopts a pseudo-structure high electron mobility transistor as an ultra-broadband switch control device, and adopts a T-type topology.
[0025] image 3 The scheme consists of a microwave and millimeter wave input port (Pb1), a microwave and millimeter wave output port (Pb2), a pseudostructure high electron mobility transistor (Fb1), three microstrip lines (Mb1, Mb2, Mb3) and two Composed of only resistors (Rb1, Rb2), the microwave and millimeter wave input port Pb1 is connected to one end of the microstrip line Mb1, the other end of the microstrip line Mb1 is connected to one end of the microstrip line Mb2, and the other end of the microstrip line Mb2 is connected to the microwave and millimeter wave output Port Pb2, the microstrip line Mb1 is connected to one end of the microstrip ...
Embodiment 3
[0026] Example 3. combine figure 1 , Figure 4 , the microwave and millimeter wave ultra-broadband low-phase-shift six-digit digital attenuator of the present invention, the 2dB attenuation unit adopts a pseudo-structure high electron mobility transistor as an ultra-broadband switch control device, and adopts a Π-type topology.
[0027] Figure 4The scheme consists of a microwave millimeter wave input port (Pc1), a microwave millimeter wave output port (Pc2), three high electron mobility transistors (Fc1, Fc2, Fc3) with pseudo-structure, and six microstrip lines (Mc1, Mc2, Mc3, Mc4, Mc5, Mc6) and six resistors (Rc1, Rc2, Rc3, Rc4, Rc5, Rc6), the microwave and millimeter wave input port Pc1 is connected to one end of the microstrip line Mc1, and the other end of the microstrip line Mc1 is connected to the dummy The source of the high electron mobility transistor Fc3 with a matching structure, the microstrip line Mc1 is connected to one end of the source of the pseudo-structu...
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Abstract
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