Polycrystalline silicon production device and method

A production device and production method technology, applied in the direction of silicon, etc., can solve the problems of high pollution, complex process, high impurity content, and achieve the effects of high activity, good spatial uniformity, and high product purity

Inactive Publication Date: 2011-05-18
HEFEI FEIFAN PLASMA TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The purpose of the present invention is to provide a polysilicon production device and a polysilicon production method to solve the problems of high pollution, complicated process and high impurity content in the prior art polysilicon production method and device

Method used

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  • Polycrystalline silicon production device and method
  • Polycrystalline silicon production device and method
  • Polycrystalline silicon production device and method

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Embodiment Construction

[0035] A polysilicon production device, comprising a polysilicon solidification receiving container, and a microwave surface wave plasma torch as a reactor, the polysilicon solidification receiving container receives the polysilicon generated by the microwave surface wave plasma torch;

[0036] Such as figure 1 , figure 2 and image 3 shown. The microwave surface wave plasma torch includes a rectangular waveguide 102, and one end of the rectangular waveguide 102 is equipped with a microwave generation and transmission device for transmitting microwaves into the rectangular waveguide 102. A coaxial excitation cavity 111, a microwave tube 112 is installed on the side wall of the excitation cavity 111. The other end of the rectangular waveguide 102 is slidably installed with a short-circuit piston 101, and the inner wall of the rectangular waveguide 102 has an arched channel compression block 103, and the side wall of the rectangular waveguide 102 where the channel compressio...

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Abstract

The invention discloses a polycrystalline silicon production device which comprises a polycrystalline silicon curing and receiving container and a microwave surface wave plasma torch, wherein the polycrystalline silicon curing and receiving container is used for receiving polycrystalline silicon produced by the microwave surface wave plasma torch. The invention also discloses a polycrystalline silicon production method which comprises the following steps of: with SiHC13 steam and H2 gas as raw material reactants, discharging electricity to the raw material reactants through the microwave surface wave plasma torch so as to heat the raw material reactants in a dielectric tube, and cooling and curing produced silicon in the polycrystalline silicon curing and receiving container to obtain polycrystalline silicon.

Description

technical field [0001] The invention relates to the field of polysilicon production, in particular to a polysilicon production device and a polysilicon production method. Background technique [0002] Currently, there are two main chemical methods that can be used to produce solar-grade polysilicon: the Siemens method and the silane method. Polysilicon produced by the Siemens method accounts for 80% of the market, while other methods account for less than 20%. [0003] The Siemens process uses a fixed bed reactor for SiHCl 3 Thermal hydrogen reduction process, that is, a chemical reaction is carried out at a high temperature above 1100°C to separate polysilicon, its reaction efficiency is lower than 20%, the direct power consumption is above 100kWh / kg, and it will produce more than 8 times more SiCl than silicon 4 , and SiH 2 Cl 2 etc., the chemical reaction process is: [0004] 3SiHCl 3 +2H 2 →Si+SiH 2 Cl 2 +SiCl 4 +3HCl+H 2 [0005] Dealing with these gases req...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03
Inventor 任兆杏任炟刘静
Owner HEFEI FEIFAN PLASMA TECH
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