Silicon wafer chemical and mechanical polishing composition with high stability

A polishing composition and organosilicon compound technology, applied in the field of polishing compositions, can solve the problems such as difficulty in quantifying and controlling the parameters of silica sol abrasive particles, reducing the polishing removal rate, and difficult to measure which is better and which is worse, and achieves excellent practicability, The effect of stable rate and less surface residue

Inactive Publication Date: 2013-08-21
TSINGHUA UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under normal conditions, the parameters of silica sol abrasive grains are difficult to quantify and control, and each performance affects each other, so it is difficult to measure which is better; the use of surfactants and polymer dispersants can easily reduce the polishing removal rate and make the polishing efficiency low

Method used

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  • Silicon wafer chemical and mechanical polishing composition with high stability
  • Silicon wafer chemical and mechanical polishing composition with high stability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Embodiment 1: (preparation of 100g silicon wafer coarse throw liquid)

[0042] Each component of polishing fluid and its weight percent are as follows in the present embodiment:

[0043] Silicon-containing stabilizer methyltrimethoxysilane: 2.0%;

[0044] Diethyltriaminepentaacetic acid chelating agent: 1.5%;

[0045] Hydroxyethylethylenediamine: 1.0%;

[0046] Isopropanolamine: 3.0%;

[0047] Nonylphenol polyoxyethylene ether 0.5%;

[0048] Silica abrasive: 24%;

[0049] The rest is deionized water.

[0050] Take 2.0g of silicon-containing stabilizer methyltrimethoxysilane, 1.5g of diethyltriaminepentaacetic acid chelating agent, 1.0g of hydroxyethylethylenediamine and 3.0g of isopropanolamine and dissolve them in 12.0g of high-purity deionized water Add 0.5g of nonylphenol polyoxyethylene ether to the dilute solution, and mix it with 80g of alkaline silica sol (solid content: 30%, average particle size: 20nm) abrasive material under stirring state to obtain 100g...

Embodiment 2

[0052] Embodiment 2: (preparation of 100g silicon wafer coarse throw liquid)

[0053] Each component of polishing fluid and its weight percent are as follows in the present embodiment:

[0054] Silicon-containing stabilizer γ-aminopropyltriethoxysilane: 0.1%;

[0055] Diethylenetriaminepentaethylenephosphonic acid chelating agent: 1.5%;

[0056] Diethanolamine: 6.0%;

[0057] Sodium dodecylbenzenesulfonate 0.4%:

[0058] Silica abrasive: 24%;

[0059] The rest is deionized water.

[0060] Take 0.1g of silicon-containing stabilizer γ-aminopropyltriethoxysilane, 1.5g of diethylenetriaminepentaethylenephosphonic acid chelating agent, and 6.0g of diethanolamine and dissolve them in a dilute solution of 12.0g of high-purity deionized water , add 0.4g sodium dodecylbenzenesulfonate again, mix with 80g alkaline silica sol abrasive (solid content is 30%, average particle diameter is 35nm) under stirring state, promptly makes 100g of the present invention Polishing fluid.

[006...

Embodiment 3

[0062] Embodiment 3: (preparation of 100g silicon wafer coarse throw liquid)

[0063] Each component of polishing fluid and its weight percent are as follows in the present embodiment:

[0064] Silicon-containing stabilizer γ-aminopropyltriethoxysilane: 5.0%;

[0065] Triethylenetetramine: 0.5%;

[0066] Methylamine: 4.0%;

[0067] Diethylenetriaminepentaethylenephosphonic acid: 0.05%;

[0068] Nonylphenol ethoxylates: 0.45%,

[0069] Silica abrasive: 32%;

[0070] The rest is deionized water.

[0071] The preparation method is as follows:

[0072] Take 5.0g of silicon-containing stabilizer γ-aminopropyltriethoxysilane, 0.5g of triethylenetetramine, 4.0g of methylamine and 0.05g of diethylenetriaminepentaethylenephosphonic acid and dissolve them in 10.0g of high-purity In the dilute solution of ionic water, add 0.45g of nonylphenol polyoxyethylene ether, and mix evenly with 80g of alkaline silica sol abrasive (solid content is 40%, average particle diameter is 50nm) und...

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Abstract

The invention discloses a silicon wafer chemical and mechanical polishing composition with high stability, belonging to the technical field of polishing compositions for roughlly polishing a semiconductor silicon substrate material. The polishing composition comprises the following components in percentage by weight: 0.5-50 percent of silicon dioxide abrasive particles, 0.01-10 percent of silicon-containing stabilizer, 0.01-20 percent of organic alkali corrosive, 0.01 -10 percent of organic acid chelating agent, 0.01-5.0 percent of other functional auxiliaries and the balance of deionized water. The polishing solution has a stabilization period of over 2 years, can perform repeated polishing or cyclic polishing, and has stable pH value and removal speed, wherein the number of cyclic polishing times can be up to 10. Meanwhile, the polishing composition has high silicon wafer removal rate up to over 1.0 mum / min, and the cyclic polishing removal rate in multiple times can be stable. The polishing solution is convenient to prepare and easy to use, has low cost, and is suitable for the rough polishing of silicon wafers of various types and sizes in the semiconductor industry.

Description

technical field [0001] The invention belongs to the technical field of polishing compositions used for rough polishing semiconductor silicon substrate materials, in particular to a high-stability silicon wafer chemical mechanical polishing composition. And it has the ability of multiple polishing and stable polishing removal. Background technique [0002] Polishing fluid for semiconductor silicon substrates is a key consumable in the front-end process of IC manufacturing industry, and an important supporting material for silicon single crystal polishing wafers. At present, the domestic polishing fluid is unstable in quality and key performance parameters are not up to standard. It is used for integrated circuits below 0.1 μm node Large-size single crystal polishing fluid basically relies on imports. According to the "Semiconductor Silicon Wafer Polishing Fluid Industry Research Report", it is estimated that by 2011, the domestic consumption of silicon wafer polishing fluid ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C09K3/14
Inventor 潘国顺李拓顾忠华雒建斌路新春刘岩
Owner TSINGHUA UNIV
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