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Device for preparing polycrystalline silicon ingots with directional solidification microstructures

A polycrystalline silicon ingot, directional solidification technology, applied in the direction of self-solidification, polycrystalline material growth, crystal growth, etc., can solve the problems of low purity of polycrystalline silicon ingots, polycrystalline silicon pollution, etc., and achieve the effect of no pollution and high purity

Inactive Publication Date: 2011-06-15
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the existing polycrystalline silicon ingot is mainly prepared in a ceramic or graphite sleeve, and the inner wall of the sleeve pollutes the polycrystalline silicon, resulting in low purity of the polycrystalline silicon ingot, and provides a polycrystalline silicon ingot with a directional solidification structure preparation device

Method used

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  • Device for preparing polycrystalline silicon ingots with directional solidification microstructures
  • Device for preparing polycrystalline silicon ingots with directional solidification microstructures
  • Device for preparing polycrystalline silicon ingots with directional solidification microstructures

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specific Embodiment approach 1

[0007] Specific implementation mode one: combine figure 1 with figure 2 Describe this embodiment, this embodiment includes a furnace body 1, a vacuum chamber 2, a vacuum pump 3, a cooler 4, a pull rod 5, a servo motor 6, a graphite base 7, a cold crucible 8, a square ring water outlet pipe 9, a water outlet connection pipe 10, First nut 11, water tank inlet pipe 12, square ring water inlet pipe 13, water inlet connection pipe 14, second nut 15, water tank outlet pipe 16, induction coil 17, graphite tube 18, support plate 19, gathering hopper 20, housing 21. Screw 22, coupling 23, adjustable gearbox 24, stepping motor 25 and hopper 26, vacuum chamber 2 is arranged in furnace body 1, vacuum pump 3 is arranged on the side wall of vacuum chamber 2, the inlet of vacuum pump 3 The end communicates with the vacuum chamber 2, the cooler 4 is arranged on the bottom plate of the furnace body 1 and the vacuum chamber 2, the pull rod 5 is arranged in the cooler 4, the lower end of the p...

specific Embodiment approach 2

[0008] Specific implementation mode two: combination Figure 3 ~ Figure 5 Describe this embodiment, the cold crucible 8 of this embodiment is made up of upper half body 8-1, lower half body 8-2 and insulating sealing material 8-3, upper half body 8-1 and lower half body 8-2 are affixed , the cross section of the cold crucible 8 is a square ring cavity body, the upper body 8-1 is divided into sixteen cylinders 8-4, and the sixteen cylinders 8-4 are along the horizontal axis on the cross section of the cold crucible 8 Set symmetrically with the vertical axis, each cylinder 8-4 is provided with a water hole 8-5, and the side wall of the lower half 8-2 is provided with a vertical blind hole 8 at the position corresponding to the water hole 8-5 -6, each longitudinal blind hole 8-6 communicates with the corresponding water hole 8-5, sixteen blind holes 8-6 are divided into eight groups, two blind holes 8-6 in each group communicate, each adjacent two A gap T is left between the pil...

specific Embodiment approach 3

[0009] Specific implementation mode three: combination image 3 To describe this embodiment, the diameter of the inscribed circle of the square ring-shaped hollow body of the cold crucible 8 of this embodiment is smaller at the top and larger at the bottom. This design facilitates smooth and continuous pulling of the granular silicon when it solidifies and expands. Other components and connections are the same as those in the second embodiment.

[0010] Specific implementation mode four: combination Figure 5 The present embodiment will be described. In the present embodiment, the gap T is 0.3 mm to 0.8 mm, and the height H of the gap T is 100 mm to 120 mm. Such crucible split gap makes the crucible have a good magnetic permeability effect. Other components and connections are the same as those in the second embodiment.

[0011] Specific implementation mode five: combination figure 1 with image 3 The present embodiment will be described. The cold crucible 8 of the prese...

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Abstract

The invention discloses a device for preparing polycrystalline silicon ingots with directional solidification microstructures, and relates to a device for preparing polycrystalline silicon ingots to solve the problem that the polycrystalline silicon ingots have low purity because polycrystalline silicon is polluted by the inner wall of a sleeve when the polycrystalline silicon ingots are prepared in the ceramic or graphite sleeve in the prior art. A cooler is arranged on a baseplate of a vacuum chamber; a pull rod is arranged in the cooler, is connected with a servomotor and is connected with a graphite base; the graphite base is arranged in a cold crucible; each water through hole on the cold crucible is communicated with a square ring-shaped water outlet pipe through a thin connecting pipe, and is communicated with a square ring-shaped water inlet pipe through a thin connecting pipe; one end of a water inlet connecting pipe is connected with the square ring-shaped water inlet pipe; an induction coil is wound on the outer wall of the cold crucible; the outlet of a graphite pipe is opposite to the inner cavity of the cold crucible; a gathering hopper is arranged on the graphite pipe; the outlet of a shell is opposite to the gathering hopper; a screw rod is arranged on the shell; and a hopper is arranged at the feeding hole of the shell. The device is used for preparing the polycrystalline silicon ingots.

Description

technical field [0001] The invention relates to a preparation device for polycrystalline silicon ingots. Background technique [0002] At present, there are three main types of silicon solar cells on the market: monocrystalline silicon, polycrystalline silicon and amorphous silicon: monocrystalline silicon solar cells have been widely used in the international market due to their high conversion efficiency (24.5%) and stable quality. , but monocrystalline silicon requires high purity of raw materials (99.999999999%). Therefore, the high production cost of monocrystalline silicon restricts the application of monocrystalline silicon. Polycrystalline silicon solar cells are widely used because of their high conversion efficiency (19.8%), stable performance and moderate cost. Polycrystalline silicon solar cells have low requirements on the purity of raw materials, and the sources of raw materials are also relatively wide. They can be made from ingots and are suitable for large-s...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/06
Inventor 陈瑞润黄锋郭景杰丁宏升苏彦庆李新中傅恒志
Owner HARBIN INST OF TECH
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