Method for preparing transparent conductive films with crystalline structures
A technology of transparent conductive film and crystalline structure, which is applied in cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems that have not been discussed, and the thickness of ITO should not be too thick, so as to achieve the effect of excellent light transmittance
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Embodiment 1
[0036] figure 1 It is a cross-sectional view of the film layer structure of the single-layer transparent conductive film of the first embodiment of the present invention. Please refer to figure 1 , prepare a cyclic olefin polymer substrate 11 with a thickness of 1.0 mm. Under the situation that substrate 11 does not adopt preheating, utilize magnetron sputtering to plate the zinc sulfide-silicon oxide (50%ZnS-50%SiO 50%ZnS-50%Sio 2 ) as the first optical adjustment layer 12, then on the first optical adjustment layer 12, zinc sulfide-silicon oxide (80% ZnS-20% SiO 2 ) as the second optical adjustment layer 13, then on the second optical adjustment layer 13, zinc sulfide-silicon oxide (50% ZnS-50% SiO 2 ) as the third optical adjustment layer 14. The stack of three optical adjustment layers is used to adjust the overall chromaticity and transmittance of the substrate 11 , and other oxide materials with similar refractive index can also be used as an alternative. Afterwards...
Embodiment 2
[0040] image 3 It is a cross-sectional view of the film layer structure of the double-layer transparent conductive film according to the second embodiment of the present invention. Please refer to image 3 , prepare a cyclic olefin polymer substrate 21 with a thickness of 1.0 mm. Under the situation that the substrate 21 does not adopt preheating, utilize magnetron sputtering to plate a layer of zinc sulfide-silicon oxide (50% ZnS-50% SiO) with a thickness of 15 nm and a refractive index of about 1.8 earlier on the surface of the substrate. 2 ) as the first optical adjustment layer 22, then on the first optical adjustment layer 22, zinc sulfide-silicon oxide (80% ZnS-20% SiO 2 ) as the second optical adjustment layer 23, and then on the second optical adjustment layer 23, zinc sulfide-silicon oxide (50% ZnS-50% SiO 2 ) as the third optical adjustment layer 24. After that, deposit a layer of zinc aluminum oxide with a thickness of 5 nm on the third optical adjustment layer...
Embodiment 4
[0048] A substrate (not shown) of a cyclic olefin polymer was prepared with a thickness of 1.0 mm. Under the condition that the substrate is not preheated, a zinc sulfide-silicon oxide (50% ZnS-50% SiO 2 ) as the first optical adjustment layer (not shown), then zinc sulfide-silicon oxide (80% ZnS-20% SiO 2 ) as the second optical adjustment layer (not shown), and then deposit zinc sulfide-silicon oxide (50% ZnS-50% SiO 2 ) as the third optical adjustment layer (not shown). Afterwards, on the third optical adjustment layer, deposit a layer of zinc aluminum oxide with a thickness of 5 nm as the first transparent conductive layer (not shown), and successively deposit indium tin oxide films of different properties on the zinc aluminum oxide: first on the zinc oxide An indium tin oxide film with high light transmittance is deposited on the aluminum as a second transparent conductive film (not shown), with a thickness of 5nm. During deposition, the sputtering argon gas flow rate i...
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Abstract
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