Schottky barrier diode and method for manufacturing schottky barrier diode

A Schottky barrier diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of ineffective enhancement of Schottky barrier diode withstand voltage, poor crystallinity, etc., to reduce reverse Leakage current, effect of reducing dislocation density

Inactive Publication Date: 2011-07-06
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, since the n-type GaN layer disclosed in the aforementioned Non-Patent Document 1 has poor crystallinity, there is a problem that the withstand voltage of the Schottky barrier diode cannot be efficiently enhanced.

Method used

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  • Schottky barrier diode and method for manufacturing schottky barrier diode
  • Schottky barrier diode and method for manufacturing schottky barrier diode
  • Schottky barrier diode and method for manufacturing schottky barrier diode

Examples

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no. 1 example

[0060] figure 1 is a cross-sectional view schematically showing the Schottky barrier diode in this embodiment. figure 2 is a perspective view schematically showing the Schottky barrier diode in this embodiment. Notice, figure 1 is along figure 2 A cross-sectional view taken along line I-I in . Such as figure 1 and 2 As shown, a Schottky barrier diode (SBD) 1 includes a GaN substrate 2, a GaN layer 3 formed on the front surface 2a of the GaN substrate 2, a Schottky electrode 4 formed on the GaN layer 3, and a GaN layer formed on the GaN layer 3. Ohmic electrode 6 on back surface 2 b of GaN substrate 2 .

[0061] GaN substrate 2 has front surface 2a and back surface 2b. It is preferable that GaN substrate 2 has a low dislocation density. For example, GaN substrate 2 has a preferred 1×10 8 cm -2 or smaller, more preferably 1×10 7 cm -2 or less, and even more preferably 1×10 6 cm -2 or smaller dislocation density. It is also possible to reduce the dislocation dens...

no. 2 example

[0091] Figure 5 is a cross-sectional view schematically showing a Schottky barrier diode in this embodiment. Figure 6 is a partial sectional view schematically showing the Schottky barrier diode in this embodiment. Notice, Figure 5 is along Figure 6 A cross-sectional view taken along line V-V in . Such as Figure 5 and 6 As shown, the difference of the Schottky barrier diode 11 in this embodiment is that: the Schottky barrier diode 11 further includes a field plate (FP) electrode 16 and an insulating layer 17 .

[0092] Specifically, insulating layer 17 is formed on front surface 3 a of GaN layer 3 , and has an opening in which Schottky electrode 4 is formed. The insulating layer 17 is made of, for example, a silicon nitride film (SiN x ) etc. to construct.

[0093] Field plate electrode 16 is formed to be connected to Schottky electrode 4 in the opening of insulating layer 17 and to overlap insulating film 17 . For example, the field plate electrode 16 has a ring...

no. 3 example

[0124] Figure 8 is a cross-sectional view schematically showing a Schottky barrier diode in this embodiment. refer to Figure 8 , the Schottky barrier diode 21 in this embodiment has a configuration basically similar to that of the Schottky barrier diode 11 in the second embodiment. The Schottky barrier diode 21 in this embodiment is different in that the Schottky barrier diode 21 does not include a GaN substrate.

[0125] Specifically, the Schottky barrier diode 21 includes a support substrate 23 , a GaN substrate 22 , a GaN layer 3 , an electrode 15 , an insulating layer 17 and an ohmic electrode 6 . The region 3c of the GaN layer 3 in contact with the Schottky electrode 4 has a 1×10 8 cm -2 or smaller, preferably 1×10 7 cm -2 or less, and more preferably 1×10 6 cm -2 or smaller dislocation density.

[0126] The support substrate 23 is a conductive substrate. GaN base 22 is formed on this support substrate 23 . GaN layer 3 is formed on this GaN substrate 22 . No...

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Abstract

Disclosed is a method for manufacturing a schottky barrier diode (11), comprising the following steps. A GaN substrate (2) is first provided. A GaN layer (3) is formed on the GaN substrate (2). A schottky electrode (4) is formed that includes a first layer which is formed of Ni or a Ni alloy and formed in contact with the top of the GaN layer (3). The step of forming the schottky electrode (4) comprises the step of forming a metal layer to serve as the schottky electrode (4) and the step of heat treating the metal layer. The dislocation density of a region, in the GaN layer (3), which is in contact with the schottky electrode (4) is not more than 1 108 cm-2.

Description

technical field [0001] The present invention relates to a Schottky barrier diode and a method for manufacturing the Schottky barrier diode. For example, the present invention relates to a Schottky barrier diode having an enhanced withstand voltage and a method of manufacturing such a Schottky barrier diode. Background technique [0002] Gallium nitride (GaN) has various excellent properties such as a bandgap about three times larger than that of silicon (Si), a breakdown electric field strength about ten times larger than that of silicon (Si), and A higher saturation electron velocity than that of silicon (Si). As for GaN, high withstand voltage and low loss that are difficult to achieve in conventional Si power devices are realized, that is, low on-resistance can be expected, and thus, application of GaN to power devices (power semiconductor elements) is expected, Such as Schottky barrier diodes (SBD). [0003] As such a Schottky barrier diode, there is disclosed a sapph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/47H01L21/28H01L29/872
CPCH01L29/2003H01L29/66143H01L29/402H01L29/0611H01L29/872H01L29/08H01L29/475
Inventor 堀井拓宫崎富仁木山诚
Owner SUMITOMO ELECTRIC IND LTD
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