Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component

A processing method and jet-type technology, applied in semiconductor/solid-state device manufacturing, optics, electrical components, etc., can solve the problems of inapplicable miniaturization and high-density patterns, and achieve the effect of improving progress

Active Publication Date: 2013-11-13
IWATANI CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in etching by plasma treatment or immersion method, a large amount of side etching and undercut etc. occur, and it is not suitable for miniaturized and high-density patterns.

Method used

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  • Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
  • Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component
  • Cluster jet processing method, semiconductor element, microelectromechanical element, and optical component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0127] Next, the results of actually processing the sample using the cluster spraying processing method of the present embodiment are shown as follows:

[0128] First, the injection time of the mixed gas sprayed on the sample and the primary pressure of the mixed gas in the gas supply unit are changed to process the surface of the sample. The relationship between the primary pressure of the process and the injection time of the sample sprayed on the sample and the etching rate of the sample is as follows: figure 2 shown.

[0129] The processing conditions are as follows: a silicon single crystal having a natural oxide film with a thickness of about 2 nm formed on the surface is used as a sample, and 6 vol% of ClF is used as a reactive gas. 3 Gas and a mixed gas composed of 94 vol % Ar gas which is a gas having a boiling point lower than that of the reactive gas. In addition, the diameter of the discharge part was set to 0.1 mm. Alternatively, make a pressure such as figure...

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PUM

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Abstract

A method for processing a sample using an electrically neutral reactive cluster is provided. The surface of a sample is processed by jetting out a mixed gas that is composed of a reactive gas and a gas with a boiling point lower than that of the reactive gas from a gas jetting part of a vacuum process room in which the sample is placed by a pressure in a range in which the mixed gas is not liquefied, in a predetermined direction, while adiabatically-expanding the mixed gas, thereby generating a reactive cluster and jetting the reactive cluster against the sample in the vacuum process room.

Description

technical field [0001] The present invention relates to a cluster jet machining method for machining the surface of a sample using reactive clusters formed from reactive gases, and semiconductor elements, microelectromechanical elements, and optical parts manufactured by the machining method using reactive clusters . Background technique [0002] As a method of processing the sample surface by irradiating gas clusters on the sample surface, for example, there is a method using a gas cluster ion beam, that is, by ionizing gas clusters and accelerating them with an electric field or a magnetic field, the gas The clusters collide with the surface of the sample to remove atoms and molecules on the surface of the sample (for example, refer to Patent Document 1). [0003] In the above-mentioned sample processing method, a gaseous mass composed of massive atomic groups or molecular clusters of the gaseous substance is generated by blowing out a pressurized gas mixed with a gaseous...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302
CPCB81B2207/015B81B2201/0264H01L21/76898G02B1/00H01L21/3065B81C2201/0132B81C1/00531H01L21/306
Inventor 小池国彦妹尾武彦吉野裕东周平松尾二郎濑木利夫二宫启
Owner IWATANI CORP
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