Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope

A manufacturing method and gyroscope technology, which are applied in the direction of manufacturing tools, manufacturing microstructure devices, and photolithography on patterned surfaces, etc., can solve the problems of no breakthrough technology and achieve low manufacturing cost, high performance, and small area. Effect

Active Publication Date: 2011-07-27
SENODIA TECH (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Therefore, in order to realize a single-chip dual-axis MEMS gyroscope with higher cost performance, people have tried various methods, but there is no breakthrough technology

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  • Manufacturing method of biaxial MEMS (micro-electro-mechanical system) gyroscope

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Embodiment Construction

[0032] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0033] The manufacturing method of the biaxial MEMS gyroscope involved in the present invention is to process the bottom wafer, the top wafer and the MEMS wafer respectively, and finally bond the wafers together to form a biaxial MEMS gyroscope with airtight packaging instrument. Wherein, the dual-axis MEMS gyroscope includes an XY dual-axis gyroscope, an XZ dual-axis gyroscope or a YZ dual-axis gyroscope. The dual-axis MEMS gyroscope is a MEMS inertial sensor, and its manufacturing method specifically includes the following steps:

[0034] A1, such as figure 1 As shown, the step of forming the bottom cavity on the bottom wafer: provide a bottom wafer 1, and the material of the bottom wafer can be a silicon wafer or a glass wafer. Silicon nitride is deposited on the bottom wafer 1 by ...

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Abstract

The invention discloses a manufacturing method of a biaxial MEMS (micro-electro-mechanical system) gyroscope. The method comprises the following seven steps of: providing a bottom wafer, and performing photoetching and anisotropic corrosion to form a bottom cavity; depositing a first layer of metal on the bottom wafer, and performing photoetching and etching processes on the first layer of metal to form a first layer of metal lower electrode and connection line; depositing a second layer of metal on the second layer of silicon oxide of the bottom wafer, and performing photoetching and etchingprocesses on the second layer of metal to form a second layer of metal seal ring and conductive block; providing a top wafer, and forming a top cavity on the top wafer through a dry method or wet method; providing an MEMS wafer, and bonding the MEMS wafer and the top wafer together through a melting and bonding process; reducing the thickness of the MEMS wafer in a first group of wafers to the thickness required in design through a chemically mechanical polishing process; and bonding a second group of wafers and the bottom wafer together through a eutectic bonding method. The biaxial gyroscope has the advantages of small area and low cost.

Description

technical field [0001] The present invention relates to a micro-electro-mechanical system (Micro-Electro-Mechanical System, referred to as MEMS) processing technology, in particular to a method for manufacturing a biaxial MEMS gyroscope. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a technology for designing, processing, manufacturing, measuring and controlling micro / nano materials. It can integrate mechanical components, optical systems, drive components, and electronic control systems into a micro-system of an overall unit. It is a manufacturing process that combines microelectronics technology and micromachining technology to manufacture various sensors, actuators, drivers and microsystems with excellent performance, low price and miniaturization. Micromachining technology includes silicon micromachining, silicon surface Micromachining, LIGA (LIGA is the three words of German Lithographie, Galanoformung and Abformung, that is, the abbreviation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C3/00G01P9/04B81B7/02
Inventor 邹波华亚平
Owner SENODIA TECH (SHANGHAI) CO LTD
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