Radiation source and lithographic apparatus

A lithography equipment and radiation source technology, applied in the field of radiation sources, can solve the problems of reducing the productivity of lithography equipment, reducing reflectivity, etc.

Active Publication Date: 2011-08-03
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Accumulation of contaminant particles on reflective surfaces of a lithographic apparatus reduces the reflectivity of these surfaces and thus may reduce the productivity that may be obtained by the lithographic apparatus

Method used

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  • Radiation source and lithographic apparatus
  • Radiation source and lithographic apparatus
  • Radiation source and lithographic apparatus

Examples

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Embodiment Construction

[0035] figure 1 A lithographic apparatus according to an embodiment of the present invention is schematically shown. The device includes an illumination system (illuminator) IL configured to adjust the radiation beam B. The apparatus further includes: a support structure (for example, a mask table) MT, which is configured to support the patterning device (for example, a mask) MA and is configured to accurately position the patterning device according to the determined parameters. The device PM is connected; a substrate table (for example, a wafer table) WT, which is configured to hold a substrate (for example, a wafer coated with a resist) W, and is configured to accurately position the substrate according to determined parameters Two positioning devices PW are connected; and a projection system (such as a refractive or reflective projection lens system) PS, which is configured to project the pattern imparted by the patterning device MA to the radiation beam B onto the target ...

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Abstract

A radiation source (SO) is configured to generate extreme ultraviolet radiation. The radiation source (SO) includes a plasma formation site (2) located at a position in which a fuel will be contacted by a beam of radiation (5) to form a plasma, an outlet (16) configured to allow gas to exit the radiation source (SO), and a contamination trap (23) at least partially- located inside the outlet (16). The contamination trap is configured to trap (23) debris particles that are generated with the formation of the plasma.

Description

Technical field [0001] The invention relates to a radiation source for generating extreme ultraviolet radiation and a lithographic apparatus. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment can be used in the manufacture of integrated circuits (ICs). In this case, a patterning device optionally called a mask or a reticle can be used to generate a circuit pattern to be formed on a single layer of the IC. The pattern can be transferred to a target portion (e.g., including a portion of a die, one or more die) on a substrate (e.g., a silicon wafer). Generally, the transfer of the pattern is performed by imaging the pattern onto a layer of radiation sensitive material (resist) provided on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are continuously patterned. Known lithographic equ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCH05G2/003G03F7/70033G03F7/70916G03F7/70983G03F7/70933H01L21/0275
Inventor A·亚库宁V·班尼恩V·伊万诺夫E·鲁普斯特拉V·克里夫特苏恩G·斯温克尔斯D·兰贝特斯基
Owner ASML NETHERLANDS BV
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