Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a semiconductor structure and a manufacturing method thereof, belonging to the technical field of semiconductors. The structure comprises a substrate and one or more layers of interconnection structures, wherein the top layer of interconnection structure comprises a plurality of bottom metal wires, a plurality of contact plugs, an interlayer dielectric layer, a top metal wire, a metal fuse and an insulating layer. The metal fuse comprises a cathode, an anode and a fusing region, wherein the cathode is arranged on at least one residual contact plug, the anode is arranged on at least one residual contact plug, the contact plug below the cathode and the contact plug below the anode are arranged at different bottom metal wires, and the fusing region is respectively connected with the cathode and the anode. The semiconductor structure and the manufacturing method thereof disclosed by the invention are simple; through the manufacturing method disclosed by the invention, the thickness of the manufactured fuse by is easier to control and is thinner, thus the fuse can be fused by using low-energy laser or current.

Description

technical field [0001] The invention relates to a semiconductor structure and a preparation method thereof, in particular to a semiconductor structure including a fuse and a preparation method thereof. Background technique [0002] With the miniaturization and increase in complexity of the semiconductor process, semiconductor devices become more susceptible to various defects or impurities, and the failure of a single metal connection, diode or transistor often constitutes a defect of the entire chip. Therefore, in order to solve this problem, some fusible links (fusible links), that is, fuses (fuse), are formed in the integrated circuit in the prior art to ensure the availability of the integrated circuit. [0003] Generally speaking, fuses are used to connect redundant circuits in integrated circuits, and once the circuit is found to be defective, these connection lines can be used to repair or replace the defective circuit. In addition, the current fuse design also provi...

AI Technical Summary

Problems solved by technology

However, in the above two technologies, the metal layer is first deposited, then etched, and then the metal layer used as the fusing zone is thinned. This not only complicates the process, but also has uneven thickness of the fusing zone after the thinning process, and its Thickness is not easy to control precisely, thus affecting fusing current and fusing time

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