Charge-detecting chip and manufacturing method thereof

A charge detection and chip technology, applied in circuits, discharge tubes, measuring devices, etc., can solve problems such as non-reusability, inability to fully meet test requirements, plasma damage, etc.

Inactive Publication Date: 2011-08-24
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma processing has many advantages, but as device dimensions shrink, a growing problem arises: plasma-induced damage
Such methods are destructive and cannot be reused
[0006] To sum up, we not only want to understand the distribution of charges in the plasma, but also want to get the accumulation of charges on each pixel. The existing technology cannot fully meet the testing requirements.

Method used

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  • Charge-detecting chip and manufacturing method thereof
  • Charge-detecting chip and manufacturing method thereof
  • Charge-detecting chip and manufacturing method thereof

Examples

Experimental program
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Embodiment Construction

[0098] A charge detection chip that can be used to monitor plasma processing technology is prepared by adopting a monolithic integration method of microelectromechanical system (MEMS) technology and IC (CMOS) technology. Such as figure 2 As shown in Figure 3, the test unit of the chip is located on the substrate 8, and consists of five main functional components: the lower plate 6, the bi-material beam 2, the piezoresistor 5, the MOS switch 4, and the protection diode 3, among which:

[0099] The double-material beam 2 is composed of a structural layer on the lower layer and a metal layer on the upper layer, and the shapes of the structural layer and the metal layer are completely coincident. The top view of the bimaterial beam 2 is a centrosymmetric figure, such as Figure 4 shown. In order to accumulate enough charges on a limited chip area, the middle of the bimaterial beam 2 is designed as a large-area rectangular flat plate, and its upper layer is the metal pole plate ...

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Abstract

The invention discloses a charge-detecting chip and a manufacturing method thereof. The chip comprises a test unit consisting of a dual material cantilever beam temperature sensitive structure and a structure for obtaining a plasma density based on an electrostatic attraction theory; a strain resistance is used as a test measure for obtaining deformation of the temperature sensitive structure anda charge-collecting structure; by adoption of a plurality of test units arranged in an array, temporal and spatial accumulation quantity and distribution of charges in a plasma environment can be monitored in real time; a possibility is provided for real-time online test of influence of the plasma on devices; and the chips can be reused for many times.

Description

technical field [0001] The invention belongs to the field of microelectromechanical systems (MEMS) and integrated circuit IC (CMOS) processing technology, relates to the real-time monitoring of plasma technology, in particular to the real-time monitoring of the charge state in the plasma technology process, which is produced by integrating MEMS and CMOS The charge detection chip and the preparation method thereof are especially used in monitoring charge and uniformity in processes containing low-temperature plasma. Background technique [0002] Plasma is a form of matter under high temperature or specific excitation, and it is the fourth state of matter besides solid, liquid and gas. Plasma is composed of a collection of ions, electrons, and unionized neutral particles, and is in a neutral state of matter as a whole. Plasma can be divided into high temperature and low temperature plasma. Low temperature plasma is widely used in the field of microelectronic processing. Wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/768H01L21/66B81B3/00B81C1/00H01J37/32G01R29/24
Inventor 赵丹淇张大成罗葵王玮田大宇杨芳刘鹏李婷
Owner PEKING UNIV
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