Nitride light-emitting diode (LED) structure and preparation method thereof

An LED structure, nitride technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low hole tunneling probability, low carrier confinement, and inability to improve the uniformity of carrier distribution, etc. Achieve the effect of improving uniformity, improving internal quantum efficiency and luminous intensity, and improving recombination efficiency

Inactive Publication Date: 2011-09-14
ENRAYTEK OPTOELECTRONICS
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Problems solved by technology

If the quantum well is too narrow, the carrier confinement effect is low, and it cannot ensure that the electron-hole pairs are fully recombined in the quantum well; if

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  • Nitride light-emitting diode (LED) structure and preparation method thereof
  • Nitride light-emitting diode (LED) structure and preparation method thereof
  • Nitride light-emitting diode (LED) structure and preparation method thereof

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[0032] The nitride LED structure and the preparation method thereof proposed by the present invention will be further described in detail below in conjunction with the drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings all adopt a very simplified form and all use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0033] The core idea of ​​the present invention is to provide a nitride LED structure. Under the premise that the transition energy between the ground state energy levels of the quantum well in the multi-quantum well active layer is gradually changed, the potential of the quantum well is gradually changed. The width of the barrier improves the uniformity of the carrier distribution in the active region. While considering the hole quan...

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Abstract

The invention discloses a nitride light-emitting diode (LED) structure. In the structure, the uniformity of a carrier in an active region is improved by gradually changing the barrier width of a quantum well on the premise of gradual changing of the transition energy among ground state energy levels of the quantum well; and while the hole quantum tunneling effect is considered, the influence of the limitation effect of the quantum well on the luminescence recombination of the quantum well is also considered, so that the composite efficiency of electrons and holes is further improved and the internal quantum efficiency and the luminous intensity of an LED are improved. The invention also discloses a preparation method of the nitride LED structure. By the method, the uniformity of the carrier in the active region is improved by gradually changing the barrier width of the quantum well at the premise that the transition energy among ground state energy levels of the quantum well is gradually changed; and while the hole quantum tunneling effect is considered, the influence of the limitation effect of the quantum well on the luminescence recombination of the quantum well is also considered, so that the composite efficiency of the electrons and holes is further improved and the internal quantum efficiency and the luminous intensity of an LED are improved.

Description

technical field [0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and the direct emission colors are red, orange, yellow, Green, blue, blue, purple light. Among them, GaN-based materials refer to GaN, InN, AlN and their ternary and quaternary compounds, which belong to direct bandgap semiconductor materials. At room temperature, their luminescent wavelengths cover near-infrared, visible and deep ultraviolet bands,...

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Application Information

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IPC IPC(8): H01L33/06H01L33/00
Inventor 于洪波
Owner ENRAYTEK OPTOELECTRONICS
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