Nitride light-emitting diode (LED) structure and preparation method thereof

Abstract

The invention discloses a nitride light-emitting diode (LED) structure. In the structure, the uniformity of a carrier in an active region is improved by gradually changing the barrier width of a quantum well on the premise of gradual changing of the transition energy among ground state energy levels of the quantum well; and while the hole quantum tunneling effect is considered, the influence of the limitation effect of the quantum well on the luminescence recombination of the quantum well is also considered, so that the composite efficiency of electrons and holes is further improved and the internal quantum efficiency and the luminous intensity of an LED are improved. The invention also discloses a preparation method of the nitride LED structure. By the method, the uniformity of the carrier in the active region is improved by gradually changing the barrier width of the quantum well at the premise that the transition energy among ground state energy levels of the quantum well is gradually changed; and while the hole quantum tunneling effect is considered, the influence of the limitation effect of the quantum well on the luminescence recombination of the quantum well is also considered, so that the composite efficiency of the electrons and holes is further improved and the internal quantum efficiency and the luminous intensity of an LED are improved.

Description

technical field [0001] The invention relates to the technical field of LED preparation, in particular to a nitride LED structure and a preparation method thereof. Background technique [0002] A light-emitting diode (LED, Light Emitting Diode) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. When a forward voltage is applied to both ends of the semiconductor PN junction, the minority carriers injected into the PN junction recombine with the majority carriers, releasing excess energy to cause photon emission, and the direct emission colors are red, orange, yellow, Green, blue, blue, purple light. Among them, GaN-based materials refer to GaN, InN, AlN and their ternary and quaternary compounds, which belong to direct bandgap semiconductor materials. At room temperature, their luminescent wavelengths cover near-infrared, visible and deep ultraviolet bands,...

AI Technical Summary

Problems solved by technology

If the quantum well is too narrow, the carrier confinement effect is low, and it cannot ensure that the electron-hole pairs are fully recombined in the quantum well; if the quantum well is too wide, the probability of hole tunneling is low, and the probability of carrier distribution in the active region cannot be improved. Uniformity

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