Semiconductor device

Abstract

The invention provides a semiconductor device, which comprises a substrate, a plurality of shallow isolation grooves, a plurality of active regions, a polycrystalline silicon layer, a plurality of interlayer dielectric layers, a first metal layer, a second metal layer and a patterned grounding shielding layer, wherein the plurality of shallow isolation grooves are formed in the substrate; the plurality of active regions are formed in the substrate; adjacent active regions are spaced through the plurality of shallow isolation grooves; the polycrystalline silicon layer is formed on the plurality of shallow isolation grooves; the plurality of interlayer dielectric layers are formed in the active regions and on the polycrystalline silicon layer; the first metal layer is sandwiched between adjacent interlayer dielectric layers; the second metal layer is formed on the interlayer dielectric layers which are positioned on a top layer and is used for forming planar induction; and the patterned grounding shielding layer is formed by grounding the active regions and the polycrystalline silicon layer through contact holes which are formed in the interlayer dielectric layers. According to the device, compared with planar induction without the patterned grounding shielding layer, the planar induction inserted into the patterned grounding shielding layer provides comparability or better Q performance, and the influence of induced substrate coupled noise on a circuit can be reduced.

Description

technical field [0001] The invention relates to a passive semiconductor device, in particular to a planar inductor in a radio frequency integrated circuit based on complementary metal oxide semiconductor (CMOS) technology. Background technique [0002] The huge demand of the rapidly growing wireless communication market has also created the demand for radio frequency integrated circuits. In recent years, with the continuous reduction of feature size, the characteristic frequency of MOSFET in deep submicron CMOS process has reached above 50 GHz, making it possible to realize high-frequency analog circuits in the GHz band using CMOS process. In recent years, researchers from all over the world have done a lot of research on the design and production of CMOS radio frequency integrated circuits, which has continuously improved the performance of CMOS radio frequency integrated circuits. [0003] Planar inductors (or on-chip inductors) are key components in RF integrated circuit...

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