Solid-state imaging device and method of manufacturing the same
A technology of a solid-state imaging device and a manufacturing method, which is applied in the direction of electric solid-state devices, radiation control devices, image communication, etc., can solve the problems of reduced sensitivity, unfavorable carrier color mixing, etc., and achieve the effects of preventing exhaustion and reducing dark current
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no. 1 Embodiment approach
[0043] In the following embodiments, a back side illumination type (BSI: Back side) in which the light irradiation surface (light receiving surface) is provided on the back side of the semiconductor substrate opposite to the surface of the semiconductor substrate on which the signal scanning circuit portion is formed is exemplified. illumination) solid-state imaging device. In addition, in this description, the common reference numeral is attached|subjected to the part common to all drawings.
[0044] As one embodiment, generally, one solid-state imaging device includes an n-type diffusion layer, p-type first and second diffusion layers, and a p-type a-amorphous silicon compound. The n-type diffusion layer is formed in the surface of the n-type semiconductor substrate, and functions as a charge accumulating portion for accumulating electrons generated in the semiconductor substrate by light irradiated from the back side to the front side of the semiconductor substrate. Featur...
no. 2 Embodiment approach
[0102] use below Figure 10 A solid-state imaging device according to a second embodiment will be described. In addition, only the structure different from the solid-state imaging device of the said 1st Embodiment is demonstrated, and the same reference numeral is used for the same member.
[0103]
[0104] Such as Figure 10 As shown, in the solid-state imaging device of this embodiment, when viewed from the first supporting substrate 20 side, a p-type a- SiC film 37 . The pixel isolation layer (p-type semiconductor layer) 36 and the p-type a-SiC film 37 realize a structure that functions as an element isolation region that electrically isolates adjacent photodiodes PD. That is, at least a part of the pixel isolation layer 36 is in contact with a part of the p-type a-SiC film 37 . In other words, a structure is adopted in which the pixel isolation layer 36 is connected to the p-type a-SiC film 37 in the epitaxially grown n-type semiconductor substrate 30 . Therefore, t...
no. 3 Embodiment approach
[0122] Next, a solid-state imaging device and a manufacturing method thereof according to a third embodiment will be described.
[0123]
[0124] The solid-state imaging device and its manufacturing method of the present embodiment apply the solid-state imaging device of the second embodiment to the semiconductor substrate 30 having a film thickness of 2.4 μm. In addition, only the difference from the said 2nd Embodiment is demonstrated, and the same reference numeral is attached|subjected to the same member.
[0125] Figure 14 show its shape. Figure 14 It is a cross-sectional view of the solid-state imaging device of this embodiment. As shown in the figure, a pixel isolation layer 36 and an a-SiC film 37 in contact with the pixel isolation layer 36 are respectively provided in an n-type semiconductor substrate 30 epitaxially grown to a film thickness of 2.4 μm.
[0126] In this case, the acceleration voltage at the time of forming the pixel isolation layer 36 is lowere...
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