Method for forming through silicon vias (TSV)

Abstract

The invention discloses a method for forming through silicon vias (TSV), belonging to the semiconductor device manufacture, microelectronic packaging and three dimensional integration field. The method comprises the following steps: (1) etching annular grooves on the right side of a silicon substrate; (2) carrying out a thermal oxidation treatment on the annular grooves; (3) making an electrical interconnection layer on the right side of the silicon substrate; (4) thinning the silicon substrate from the back side of the silicon substrate; (5) etching the silicon substrate in the annular grooves which are sealed by an oxygen ambient silica layer to remove the oxygen ambient silica layer totally and forming deep holes in the inner side of the annular grooves; and filling conductive material in the deep holes to form the through silicon vias (TSV). By using the method provided in the invention, the through silicon vias (TSV) using high quality thick oxygen ambient silica layer, metallic sidewall isolation and conductive filling material can be obtained, and the reliability and electricity performance of the through silicon vias (TSV) are improved.

Description

technical field [0001] The invention relates to the technical fields of semiconductor manufacturing, microelectronic packaging and three-dimensional integration, in particular to a method for forming through-silicon holes. Background technique [0002] Through-Silicon-Via (TSV) is an electrical connection through the chip, which can conduct signals from one side of the chip to the other side of the chip, and realize the three-dimensional structure of multi-layer chips by combining chip stacking technology. integrated. Compared with the traditional wire bonding technology, the use of TSVs can effectively shorten the length of interconnection lines between chips, thereby improving the signal transmission performance and operating frequency of electronic systems, which is an important direction for the development of semiconductor technology in the future. How to The formation of through-silicon vias is the core to realize the three-dimensional integration of multi-layer chips...

AI Technical Summary

Problems solved by technology

[0008] In order to solve the problem that the TSV formation method in the prior art is difficult to ensure the sidewall isolation performance and electrical conduction performance of the TSV at the same time; the sidewall insulating layer is thin, and the high-frequency performance of the TSV is limited. Problem, the present invention proposes a new method for forming through-silicon vias, which can be used to obtain through-silicon vias that use high-quality thick silicon oxide layers and metals as sidewall isolation and conductive filling materials at the same time, improving Reliability and electrical performance of TSVs

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