Fluorine contained composition and application thereof
A technology of composition and polymer, applied in the direction of detergent composition, non-surface active detergent composition, inorganic non-surface active detergent composition, etc., can solve the problem of high corrosion rate of polysilicon
Active Publication Date: 2015-05-27
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF4 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The technical problem to be solved by the present invention is to overcome the defect of high corrosion rate of polysilicon in the existing fluorine-containing composition, to provide a fluorine-containing composition that can effectively inhibit the corrosion rate of polysilicon, and to further expand the application of fluorine-containing composition in semiconductors. Wafer cleaning, polysilicon mechanical polishing and wet etching, solar cells and other fields of application
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1~22
[0016] Table 1 shows Examples 1-22 of the fluorine-containing composition of the present invention. According to the formula in the table, the components are uniformly mixed to prepare the fluorine-containing composition of each example.
[0017] Table 1 Fluorine-containing composition embodiment 1~22 of the present invention
[0018]
[0019]
[0020]
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A fluorine contained composition which contains a fluoride compound, a polyvinyl-pyrrolidone type polymer and a carrier is disclosed. The disadvantage of high corrosion rate on the polycrystal silicon due to the conventional fluorine contained composition can be eliminated. By adding the selected polyvinyl-pyrrolidone type polymer that is applicable in a fluorine contained system, a fluorine contained composition is provided which can effectively inhibit the corrosion rate of polycrystal silicon. The applications of the fluorine contained composition in the field of semiconductor wafer cleanning, mechannical polishing and wet-etching, solar battery etc. can be further developed. The application of the composition in cleaning semiconductor wafer is also disclosed.
Description
technical field [0001] The invention relates to a fluorine-containing composition and its application, in particular to the fluorine-containing composition and its application in the semiconductor manufacturing process. technical background [0002] Polysilicon material is an electronic material that is purified to a certain purity after a series of physical and chemical reactions, and is an extremely important intermediate product in the silicon product industry chain. It is used to manufacture silicon polished wafers, solar cells and high-purity silicon products. It is the most basic raw material for information industry and new energy industry. In the field of semiconductor manufacturing, polysilicon is widely used, such as using polysilicon to manufacture gates (Gate) and vias (Contact). In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23G1/18C11D7/32H01L21/306C08J3/03
CPCC11D7/10C11D7/3281H01L21/02071H01L21/30604C11D2111/22
Inventor 刘兵彭洪修
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
