Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor

Abstract

The invention relates to a suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor, which can be used for the epitaxial growth of light emitting diodes (LEDs) on a large scale. The suspended spraying type MOCVD reactor comprises a nozzle, a base, a cover plate, flow diversion holes and a reaction zone, wherein the nozzle is arranged in the center of the base and comprises an upper nozzle and a lower nozzle; the lower nozzle is positioned on the lower part of the upper nozzle; the upper nozzle and the lower nozzle are provided with two radial channels respectively; the base comprise a large graphite disk; small graphite disks are arranged in the large graphite disk along the circumferential direction; wafer substrates are arranged in each small graphite disk along the circumferential direction; the bottom of the large graphite disk is provided with a revolution driving mechanism; the bottom of each small graphite disk is provided with an autorotation drive mechanism; and the flow diversion holes are formed on the inner wall of the cavity of the reaction zone along the circumferential direction. The suspended spraying type MOCVD reactor can improve the deposition uniformity of thin films and the utilization rate of source materials, prolong the service life of the graphite disks of the base, improve the introduction of source gas and the distribution of carrier gas, optimize the designs of the size of the reactor and the curve surface of the cover plate and prevent the generation of eddy current.

Description

technical field [0001] The invention relates to a device of a suspended spray type metal organic chemical vapor deposition (MOCVD) reactor, in particular to a suspended spray type MOCVD reactor which can be used for epitaxial growth of large batches of LEDs. Background technique [0002] The reactor is the heart of MOCVD. There are three main types of MOCVD reactors for LED epitaxy: Planar Reactor, Close Coupled Showerhead Reactor and Turbo Disc Reactor. [0003] DE 10247921 A1 has described an MOCVD reactor of the planar reactor type. Wherein, the base is formed by the bottom surface of the reactor. A plurality of substrate holders are arranged on the bottom surface of the reaction chamber, and the substrate holders are driven to rotate by the airflow. A substrate is on each substrate holder. [0004] WO2005080631 has disclosed an inlet system for an MOCVD reactor. Wherein, the reactor comprises a top plate, a bottom plate and a gas inlet element. The gas inlet elemen...

AI Technical Summary

Problems solved by technology

The reactants gradually decrease in the radial concentration distribution, making it difficult to produce a thin and uniform concentration boundary layer

In the process of gas ejection and gas transportation, due to the thermal effect of bottom heating, the planar reactor is prone to generate heat convection vortices, resulting in fluctuations in the concentration of reactants above the wafer substrate (6), affecting the composition and thickness uniformity of film growth sex

In addition, the planar reactor with air pumping at the bottom is prone to produce lateral boundary layers on the reaction chamber wall to affect the uniformity of flow, and the reaction chamber wall is also prone to parasitic reactions or condensation deposition.

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