Casting method for producing furnace feeding silicon material similar to monocrystalline silicon ingot and seed crystal placing method

Abstract

The invention discloses a casting method for producing a furnace feeding silicon material similar to a monocrystalline silicon ingot and a seed crystal placing method, and relates to a furnace feeding silicon material and a seed crystal placing method. The casting method and the seed crystal placing method are characterized in that: a. silicon materials with single block weight not more than 200 g are paved on seed crystals at the thickness of 0.5-60 cm; and b. the distance between the seed crystals is not more than 0.1 mm. The casting method and the seed crystal placing method have the following beneficial effects: 1. under the control of the method, the defects caused by the seed crystals are reduced, the low productivity problem caused by a large number of dislocated similar single crystals is effectively solved, and the photoelectric conversion efficiency of an ingot casting furnace for growing the similar single crystals is improved by about 0.1%; and 2. the high cost problem of similar single crystal production is simultaneously solved, the thickness of the seed crystals is controlled below 20 mm, and the production cost of a single furnace (about 450 kg) can be reduced by ** yuan.

Description

technical field [0001] The invention relates to the field of crystal growth, and further relates to a method for placing silicon material into a furnace and a seed crystal, in particular to a method for producing silicon material similar to a single crystal silicon ingot by casting and placing a silicon material in a furnace and a seed crystal. Background technique [0002] The methods of producing silicon ingots include: CZ method to produce monocrystalline silicon ingots, ingot casting method to produce polycrystalline silicon ingots, FZ method to produce monocrystalline silicon ingots, EFG to produce silicon ribbons and other methods. Due to cost issues, currently solar cells mainly use CZ method single crystal silicon wafers and casting method polycrystalline silicon wafers. The manufacturing cost of CZ monocrystalline silicon is 4 to 5 times that of ingot polysilicon, and the energy consumption is 5 to 7 times higher, resulting in less and less market share of CZ monocr...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a casting method to produce similar single crystal silicon ingot furnace silicon material and seed placement method, in the ingot furnace growth similar single crystal (quasi-single crystal) process in GT or four-sided and top heater Among them, it can solve the problem of low photoelectric conversion efficiency caused by a large number of dislocations similar to single crystal, and solve the problem of high cost similar to single crystal production