A kind of method for macroscopically preparing graphene

A graphene and macro-quantity technology, which is applied in the field of macro-preparation of graphene, can solve the problems of low yield and achieve the effect of simple method, easy large-scale implementation and low price

Active Publication Date: 2011-11-30
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these epitaxial growth methods are currently limited to basic research in surface science, and the yield of graphene grown on single crystal surfaces is rather low.
Therefore, it is still a big challenge to prepare unsupported graphene in large quantities, especially for single-layer graphene, which will be the key to restrict its future application.

Method used

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  • A kind of method for macroscopically preparing graphene
  • A kind of method for macroscopically preparing graphene
  • A kind of method for macroscopically preparing graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1. Put 400.0mg of α-type silicon carbide powder into a 0.56mL tantalum boat and place it in a high-temperature vacuum furnace.

[0023] 2. Pump the vacuum of the high temperature vacuum furnace in (1) to 5.0×10 -5 Pa.

[0024] 3. The high-temperature vacuum furnace in (2) is heated up to 2000° C. at a heating rate of 90° C. / min, and kept at this temperature for half an hour.

[0025] TEM (see figure 1 ), scanning tunneling microscope (see figure 2 ) and Raman spectroscopy (see image 3 ) analysis test shows that the obtained graphene has a single-layer structure, and is distributed in sheets and has fewer defects.

Embodiment 2

[0027] 1. Put 400.5mg of α-type silicon carbide powder into a 0.56mL tantalum boat and place it in a high-temperature vacuum furnace.

[0028] 2. Pump the vacuum of the high temperature vacuum furnace in (1) to 5.0×10 -5 Pa.

[0029] 3. The high-temperature vacuum furnace in (2) is heated up to 1400° C. at a heating rate of 90° C. / min, and kept at this temperature for half an hour.

[0030] The obtained graphene is single-layer graphene, and is attached on a silicon carbide carrier.

Embodiment 3

[0032] 1. Put 400.1mg of α-type silicon carbide powder into a 0.56mL tantalum boat and place it in a high-temperature vacuum furnace.

[0033] 2. Pump the vacuum of the high temperature vacuum furnace in (1) to 5.0×10 -5 Pa.

[0034] 3. The high-temperature vacuum furnace in (2) is heated up to 2000° C. at a heating rate of 15° C. / min, and kept at this temperature for half an hour.

[0035] The obtained graphene is unsupported few-layer (1-8 layer) graphene.

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PUM

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Abstract

The invention discloses a method of macroscopic preparation of grapheme, characterized by that: product SiC polycrystalline powder is subject to thermal splitting to sublimate Si rapidly, and grapheme can be prepared through self-assembly of the obtained carbon species. The prepared grapheme has little defects and high oxidation resistance ability. By changing the particle size, type of crystals, heating rate, degree of vacuum of the system and the reaction atmosphere, the dimension, thickness, regularity, shape and types of function groups of the prepared grapheme can be regulated and controlled. The method has the advantages of simple and easiness in operation and control.

Description

technical field [0001] The invention relates to graphene nanomaterials, in particular to a method for preparing graphene in large quantities. Background technique [0002] Graphene is made of sp 2 A two-dimensional crystal of a monoatomic layer formed by hybridized carbon, which is the basic structural element of many carbon allotropes such as zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimensional graphite (A.K.Geim, K.S.Novoselov, Nat. Mater. 6, 183 (2007)). Since Geim and his collaborators first exfoliated single-layer graphene from highly oriented pyrolysis graphite in 2004 (K.S.Novoselov et al., Science 306, 666 (2004)), the development and utilization of graphene has become an important research focus. Studies have found that graphene has a large specific surface area, high thermal and electrical conductivity, and high charge carrier mobility (M.J.Allen, V.C.Tung, R.B.Kaner, Chem.Rev.110, 132(2010)). Therefore, it has broad application ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 包信和邓德会潘秀莲谭大力
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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