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Photographic device with photo sensor and manufacturing method thereof

A camera device, optical sensor technology, applied in radiation control devices, installation, optics, etc., can solve problems such as constraints and peeling

Inactive Publication Date: 2014-11-05
TERA PROBE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the above-mentioned conventional method of manufacturing an imaging device, there is a problem that many steps are required to form a through-hole in the peripheral portion of the imaging device forming region of the semiconductor wafer, such as forming a resist film on the lower surface of the semiconductor wafer, resisting Resist film formation of openings, formation of through-holes in semiconductor wafers by etching using a resist film as a mask, removal of resist films, etc.
In addition, there is also a problem that before the process of grinding the lower surface side of the semiconductor wafer to reduce the thickness of the semiconductor wafer, it is necessary to arrange a glass plate having the same size as the semiconductor wafer on the semiconductor wafer for strengthening. , thus being constrained in the process of processing

Method used

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  • Photographic device with photo sensor and manufacturing method thereof
  • Photographic device with photo sensor and manufacturing method thereof
  • Photographic device with photo sensor and manufacturing method thereof

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no. 1 Embodiment approach

[0024] figure 1 A cross-sectional view of an imaging device according to a first embodiment of the present invention is shown. The camera has a light sensor 1 . The optical sensor 1 includes a planar rectangular semiconductor substrate 2 made of silicon, or gallium arsenide, which is a compound semiconductor, composed of a compound of Ga (gallium) and As (arsenic). A photoelectric conversion device region 3 including elements such as a CCD (Charge Coupled Device), a photodiode, and a phototransistor is provided at the center of the lower surface of the semiconductor substrate 2 . A plurality of connection pads 4 made of aluminum-based metal or the like and connected to the photoelectric conversion device region 3 are provided on the peripheral portion of the lower surface of the semiconductor substrate 2 .

[0025] On the lower surface of the semiconductor substrate 2 except the peripheral portion of the semiconductor substrate 2 and the central portion of the connection pad...

no. 2 Embodiment approach

[0046] Figure 11 A sectional view showing an imaging device as a second embodiment of the present invention. This imaging device also has a back-illuminated structure in which light is incident from the arrow direction, and figure 1 The difference between the illustrated imaging device is that the columnar electrode 12 is omitted from the photosensor 1 . In this case, openings 13 a for connecting solder balls 14 to the lands of the wires 9 are formed in portions of the sealing film 13 corresponding to the lands of the wires 9 (electrodes for external connection).

[0047] In addition, the sealing film 13 may be formed of polyimide-based resin, solder resist, or the like. In addition, similarly to the first embodiment, in this embodiment, the visible light transmission plate 21 is provided between the semiconductor substrate 2 and the lens unit 23 of the optical sensor 1, but for example, it is also possible to use The lens 25 of the infrared cut filter following infrared r...

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Abstract

An optical sensor (1) has: a photoelectric conversion device region (3) and a connection pad (4) located on the lower surface of a semiconductor substrate (2), and has: under the semiconductor substrate 2 via an insulating film (5, 7) and the wiring (9) connected to the connection pad (3), and the columnar electrode (12) as an electrode for external connection connected to the wiring (9). As a result, compared with the case where the photoelectric conversion device region (3) and the connection pad (4) connected to the photoelectric conversion device region (3) are formed on the upper surface of the semiconductor substrate (2), there is no need to form The through-electrode for connecting the connection pad (4) and the wiring (9) can reduce the number of steps, and can be less subject to constraints in the process of processing.

Description

technical field [0001] The present invention relates to an imaging device having an optical sensor and a manufacturing method thereof. Background technique [0002] Japanese Unexamined Patent Application Publication No. 2010-56292 discloses a technique in which a glass plate having a lens on the lower surface is attached to an optical sensor via a frame-shaped spacer. In this case, the photosensor has a semiconductor substrate. A light receiving unit is provided at the center of the upper surface of the semiconductor substrate. Connection pads connected to the light receiving portion are provided on the peripheral portion of the upper surface of the semiconductor substrate. [0003] Wiring is provided on the lower surface of the semiconductor substrate. For example, in the case of CMOS, wiring is necessary to take out a signal as a voltage. One end of the wiring is connected to the connection pad via a through-hole electrode provided in a through-hole located in a periph...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146G02B7/02H04N5/225
Inventor 三原一郎若林猛
Owner TERA PROBE