A Crucible with Uniform Melt Concentration
A melt and concentration technology, applied in the field of crucibles, can solve the problems of affecting the uniformity of resistivity of single crystal silicon, increase of impurity melt concentration, uneven distribution of impurities, etc., and achieve the effects of simple structure, improved uniformity, and flexible application.
Inactive Publication Date: 2011-12-14
ZHENJIANG DACHENG NEW ENERGY
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Problems solved by technology
The impurity distribution in the solid silicon rod is directly related to the impurity distribution in the melt, and whether the impurity distribution in the melt is uniform is related to stirring on the one hand, and the segregation process during the growth of single crystal on the other hand. As the crystallization process continues, the molten silicon in the crucible decreases continuously. At the same time, the distribution of impurities in the melt is inevitably affected by segregation, which causes the concentration of impurities relative to the melt to increase or decrease continuously. The distribution of impurities from the head to the tail of the ingot is uneven, which affects the uniformity of the resistivity of single crystal silicon
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[0010] Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention Modifications in equivalent forms all fall within the scope defined by the appended claims of this application.
[0011] as attached figure 1 , 2 As shown, a crucible with uniform melt concentration includes a main crucible 1 for pulling single crystals, and an auxiliary crucible 2 that provides supplements to the main crucible 1. The two sets of auxiliary crucibles are placed outside the main crucible 1. The main crucible, 1 offers a communication hole 3 with the auxiliary crucible 2.
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The invention discloses a crucible with uniform melt concentration, which includes a main crucible for pulling single crystals, and an auxiliary crucible for supplying supplements to the main crucible, and the auxiliary crucible communicates with the main crucible. The invention has the advantages of simple structure and flexible application, effectively solves the problem of affecting the uniformity of resistivity of single crystal silicon due to the uneven concentration of impurities in the melt during the growth of single crystal, and improves the uniformity of melt concentration, thereby Improve the quality of monocrystalline silicon.
Description
technical field [0001] The invention relates to a crucible, in particular to a crucible capable of improving the uniformity of melt concentration. Background technique [0002] Monocrystalline silicon used in semiconductor devices requires high resistivity uniformity. During the drawing process of monocrystalline silicon, there are many factors that affect the uniformity of its resistivity. One is that some impurities, such as boron and gallium, are added to the polycrystalline silicon melt to improve the energy conversion rate and electrical conductivity of monocrystalline silicon. , silicon carbide, etc. At this time, whether the impurity distribution in the drawn single crystal silicon rod is uniform will affect the uniformity of its resistivity. The impurity distribution in the solid silicon rod is directly related to the impurity distribution in the melt, and whether the impurity distribution in the melt is uniform is related to stirring on the one hand, and the segreg...
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Inventor 张燕青史爱波
Owner ZHENJIANG DACHENG NEW ENERGY