Semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their fabrication, can solve problems such as large differences in structure and process, no mass production, incompatibility, etc., to save power consumption, avoid a lot of costs, and avoid data loss. Effect
Active Publication Date: 2014-03-19
SEMICON MFG INT (SHANGHAI) CORP +1
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0006] However, this phase change memory is only in the experimental process at this stage, and has not been mass-produced.
Moreover, due to the large difference with the structure and process of the existing non-volatile memory, it cannot be compatible with the existing production line. If the phase-change memory needs to be produced in large quantities, the production line needs to be re-established, which requires a lot of investment. funds, high cost
Method used
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[0043] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0044]In order to provide a thorough understanding of the present invention, detailed steps will be set forth in the following description to illustrate how the present invention is used to fabricate semiconductor devices. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0045] In the following paragraphs the ...
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Abstract
The invention provides a semiconductor device which comprises the following parts: a substrate; a first oxide layer formed on the substrate; a single crystalline silicon layer formed on the first oxide layer; a second oxide layer formed on the single crystalline silicon layer; a grid electrode formed on the second oxide layer. The invention also provides a manufacturing method of the semiconductor device. The method comprises the following steps: providing a substrate; forming a first oxide layer on the substrate; forming a single crystalline silicon layer on the first oxide layer; forming a second oxide layer on the single crystalline silicon layer; forming a grid electrode on the second oxide layer. The semiconductor device produced in the invention has low work voltage, and is compatible to present production line.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Generally, semiconductor memory for storing data is classified into volatile memory and nonvolatile memory, volatile memory is prone to data loss when power is interrupted, and nonvolatile memory can retain data even when power is interrupted. Therefore, nonvolatile semiconductor memories have been widely used in mobile communication systems, memory cards, and the like. In the prior art, a stacked gate memory in which a floating gate and a control gate are stacked has been developed and mass-produced. The floating gate is used to program the charge and the control gate is used to control the floating gate. [0003] In recent years, various nonvolatile memories have been proposed, such as EEPROM, etc., one of which is a nonvolatile memory with a silicon-oxide-nitride-oxide-silicon (SO...
Claims
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IPC IPC(8): H01L27/115H01L21/8247H01L21/28H01L21/285H10B69/00
Inventor 沈忆华朱虹
Owner SEMICON MFG INT (SHANGHAI) CORP