Giant magnetoresistive spin valve magnetic sensor and manufacturing method thereof

A magnetic sensor, spin valve technology, applied in the field of magnetic field control resistors, electromagnetic device manufacturing/processing, instruments, etc., can solve the problem of reducing the feasibility of commercialization, unfavorable large-scale production of devices, and has not been practically applied etc. to achieve the effect of good linearity, easy implementation and small size

Inactive Publication Date: 2011-12-21
钱正洪
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because this scheme increases the complexity of the process, it is not conducive to the large-scale production of devices at t...

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  • Giant magnetoresistive spin valve magnetic sensor and manufacturing method thereof
  • Giant magnetoresistive spin valve magnetic sensor and manufacturing method thereof
  • Giant magnetoresistive spin valve magnetic sensor and manufacturing method thereof

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Embodiment Construction

[0036] The substantive features of the invention will be further described below in conjunction with the drawings and specific implementations of the specification.

[0037] Figure 1-3 It has been described in the background technology part, and will not be repeated here.

[0038] Such as Figure 4 As shown in the schematic diagram of the top pinned spin valve sensor structure, the magnetic sensor of the GMR spin valve material of the present invention adopts the GMR spin valve magnetic sensor, which consists of two pairs of four spin valve magnetoresistors with opposite response characteristics. The Wheatstone bridge that forms the push-pull structure. This method does not require integrated wires and is suitable for process realization at the silicon wafer level. The Wheatstone bridge is composed of two pairs of magnetoresistors with different spin valve material structures. The spin valve material of each pair of magnetoresistor has the same structure. The first pair of magne...

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Abstract

The invention relates to a giant magnetoresistance spin valve magnetosensitive sensor and a manufacturing method thereof. The prior art technology and commercial production are extremely difficult. The invention comprises a Wheatstone bridge composed of four magnetoresistors, characterized in that the four magnetoresistors constituting the Wheatstone bridge are made of two different spin valve materials, wherein two magnetoresistors are made of ordinary is made of spin valve material, while the other two magnetoresistors are made of spin valve material with a synthetic antiferromagnetic pinned layer. The differential output signal of the Wheatstone bridge composed of these two pairs of magnetoresistors is outside Push-pull output is formed under the field. The GMR spin valve sensor is realized by two spin valve material deposition methods. Its advantages lie in maximizing the output signal, simple process, easy implementation, small size, high sensitivity and good linearity, and it is an ideal solution for realizing industrial production.

Description

Technical field [0001] The invention relates to a giant magnetoresistive spin valve magnetic sensor and a manufacturing method thereof, and belongs to the technical field of measuring devices. Background technique [0002] Giant magnetoresistance (GMR) spin valve magnetic sensor, which can be widely used in displacement measurement, speed measurement, precise positioning of precision machinery, oil exploration system, power control, automobile ABS system, speed control and automatic sensing in navigation, missiles Navigation, medical equipment and other technical fields. Compared with traditional magnetic sensors such as Hall devices and AMR devices, GMR spin valve magnetic sensors have many advantages in terms of size, sensitivity, energy consumption and stability. [0003] In the prior art, a Wheatstone bridge structure is generally used to implement the design of the GMR spin valve magnetic sensor. Such as figure 1 As shown, the Wheatstone bridge structure consists of four equ...

Claims

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Application Information

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IPC IPC(8): G01R33/09H01L43/08H01L43/12
Inventor 钱正洪
Owner 钱正洪
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