A kind of thin goi wafer and preparation method thereof

Abstract

The invention provides a thin GOI (germanium-on-insulator) wafer and a preparation method thereof. A high-temperature and low-temperature thin Ge film growing method is adopted, so that the defects of penetration of dislocation can be limited within the thin film. Moreover, the SmartCut technology is combined for preparation of a controlled GOI substrate with a top thin Ge film with the thickness of dozens to hundreds of nanometers. The characteristics of Ge materials and SOI (silicon-on-insulator) materials are combined in the GOI substrate, and the formed device has high carrier mobility, low parasitic capacitance, high resistance to radiation effects and simplified isolation performance. Moreover, the method can be used for preparing GOI layers with strain or complete relaxation to meet requirements of different devices. The preparation method has a simple process and can be applied in large-scale industrial production.

Description

technical field [0001] The invention relates to a wafer and a preparation method thereof, in particular to a thin GOI wafer and a preparation method thereof. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulating substrate) technology introduces a buried oxide layer between the top silicon and the back substrate. By forming a semiconductor thin film on an insulator, the SOI material has the incomparable advantages of bulk silicon: it can realize the dielectric isolation of components in integrated circuits, and completely eliminate the parasitic latch effect in bulk silicon CMOS circuits; The integrated circuit also has the advantages of small parasitic capacitance, high integration density, fast speed, simple process, small short channel effect, and is especially suitable for low-voltage and low-power circuits. Therefore, it can be said that SOI will likely become a deep submicron low-voltage , The mainstream technology of low-power integrated circu...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of thin GOI wafer and preparation method thereof, to solve the problem of long duration of process in prior art, defects still exist in single crystal germanium, gradient thick buffer layer Epitaxy has technical challenges and other shortcomings

Images