Solid laser capable of detecting CO and CO2
A solid-state laser, pulsed laser technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of measurement accuracy and sensitivity limitations, poor output beam quality, etc., to achieve high beam quality, high output power, The effect of improving detection accuracy and sensitivity
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[0015] Example 1: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped YAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength solid-state laser output.
[0016] Growth doped 25at.%Yb by molten salt method 3+ And 1.1at.%Er 3+ YAl 3 (BO 3 ) 4 Crystal. At 976nm, Yb 3+ And Er 3+ The sum of the absorption coefficients of the pump light incident parallel to the optical axis of the ion pair is 43cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in a single pass, determine c The thickness of the sliced crystal is 0.35mm (the end area is generally from square millimeters to square centimeters). Then the end face of the crystal is polished and fixed on the aluminum sheet and placed in the laser cavity. The transmittance of the incident coated cavity mirror near the wavelength of 976nm is T≥90%, the transmittance at 1580nm wavelength is T=0.8%, and the transmittance of the wavelength longer than 1590nm is T≥20%...
Example Embodiment
[0017] Example 2: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped LuAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength solid-state laser output.
[0018] Using molten salt method to grow doped 24.1at.%Yb 3+ And 1.1at.%Er 3+ LuAl 3 (BO 3 ) 4 Crystal. At 976nm, Yb 3+ And Er 3+ The sum of the absorption coefficients of the pump light incident parallel to the optical axis of the ion pair is 45 cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in a single pass, determine c The thickness of the sliced crystal is 0.35mm (the end area is generally from square millimeters to square centimeters). Then the end face of the crystal is polished and fixed on the aluminum sheet and placed in the laser cavity. The transmittance of the incident coated cavity mirror near the wavelength of 976nm is T≥90%, the transmittance at 1580nm wavelength is T=0.8%, and the transmittance of the wavelength longer than 1590nm...
Example Embodiment
[0019] Example 3: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped YAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength pulsed solid-state laser output.
[0020] Directly insert the 1580nm band acousto-optic Q-switch module between the laser crystal and the outgoing coating cavity mirror in Example 1, and use the 20W 976nm semiconductor laser end pump to achieve pulse energy higher than 250 μJ, pulse width shorter than 220 ns and 1580nm active Q-switched single-wavelength pulsed laser output with peak output power higher than 1.1 kW. Or paste one end face of the laser crystal with one end face of the acousto-optic Q-switch module, and the other end face of the laser crystal and the other end face of the acousto-optic Q-switch module are plated with suitable 976nm infrared laser end-pumping, 1580nm laser resonance and output pulse The dielectric film of the laser can also output 1580nm active Q-switched single-wavelength pulsed laser using 976nm semiconducto...
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