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Solid laser capable of detecting CO and CO2

A solid-state laser, pulsed laser technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of measurement accuracy and sensitivity limitations, poor output beam quality, etc., to achieve high beam quality, high output power, The effect of improving detection accuracy and sensitivity

Inactive Publication Date: 2012-01-04
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the poor quality of the output beam of the semiconductor laser, and the output laser wavelength changes with the operating temperature and output power, it is limited in terms of measurement accuracy and sensitivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0015] Example 1: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped YAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength solid-state laser output.

[0016] Growth doped 25at.%Yb by molten salt method 3+ And 1.1at.%Er 3+ YAl 3 (BO 3 ) 4 Crystal. At 976nm, Yb 3+ And Er 3+ The sum of the absorption coefficients of the pump light incident parallel to the optical axis of the ion pair is 43cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in a single pass, determine c The thickness of the sliced ​​crystal is 0.35mm (the end area is generally from square millimeters to square centimeters). Then the end face of the crystal is polished and fixed on the aluminum sheet and placed in the laser cavity. The transmittance of the incident coated cavity mirror near the wavelength of 976nm is T≥90%, the transmittance at 1580nm wavelength is T=0.8%, and the transmittance of the wavelength longer than 1590nm is T≥20%...

example 2

[0017] Example 2: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped LuAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength solid-state laser output.

[0018] Using molten salt method to grow doped 24.1at.%Yb 3+ And 1.1at.%Er 3+ LuAl 3 (BO 3 ) 4 Crystal. At 976nm, Yb 3+ And Er 3+ The sum of the absorption coefficients of the pump light incident parallel to the optical axis of the ion pair is 45 cm -1 . According to the principle that the crystal needs to absorb about 80% of the incident pump light power in a single pass, determine c The thickness of the sliced ​​crystal is 0.35mm (the end area is generally from square millimeters to square centimeters). Then the end face of the crystal is polished and fixed on the aluminum sheet and placed in the laser cavity. The transmittance of the incident coated cavity mirror near the wavelength of 976nm is T≥90%, the transmittance at 1580nm wavelength is T=0.8%, and the transmittance of the wavelength longer than 1590nm...

example 3

[0019] Example 3: 976nm semiconductor laser end-pumped Yb 3+ And Er 3+ Ion doped YAl 3 (BO 3 ) 4 The crystal realizes 1580nm single-wavelength pulsed solid-state laser output.

[0020] Directly insert the 1580nm band acousto-optic Q-switch module between the laser crystal and the outgoing coating cavity mirror in Example 1, and use the 20W 976nm semiconductor laser end pump to achieve pulse energy higher than 250 μJ, pulse width shorter than 220 ns and 1580nm active Q-switched single-wavelength pulsed laser output with peak output power higher than 1.1 kW. Or paste one end face of the laser crystal with one end face of the acousto-optic Q-switch module, and the other end face of the laser crystal and the other end face of the acousto-optic Q-switch module are plated with suitable 976nm infrared laser end-pumping, 1580nm laser resonance and output pulse The dielectric film of the laser can also output 1580nm active Q-switched single-wavelength pulsed laser using 976nm semiconducto...

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PUM

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Abstract

The invention discloses a 1,580nm single-wavelength solid laser capable of detecting CO and CO2, and belongs to the fields of solid laser materials and devices. A boron aluminate laser crystal doped with Er<3+> and Yb<3+> is adopted as a gain medium, the transmittance of an input dielectric film and an output dielectric film of a laser cavity is designed by combining the high laser performance of the crystal at the waveband of 1.5 to 1.6 mu m and the characteristic of gain peak of the crystal at the wavelength of 1,580nm, and 1,580nm single-wavelength solid laser output is realized by utilizing infrared laser pumping at wavebands in the vicinity of 976nm. 1,580nm single-wavelength solid laser with high output power and high beam quality can be used for CO and CO2 detection.

Description

[0001] Technical field [0002] The invention relates to the field of solid laser materials and devices. Background technique [0003] 1580nm is CO and CO 2 The gas is located at an absorption peak wavelength in the near-infrared band. Therefore, the 1580nm wavelength laser that is safe for the human eye can be used for trace CO and CO 2 Long-range gas detection has important military and civilian value and broad market prospects. Currently used to detect CO and CO 2 The gas laser absorption spectrometer (laser absorption spectrometer, LAS) light source mainly uses 1580nm semiconductor laser. Since the quality of the output beam of the semiconductor laser is poor, and the output laser wavelength changes with the working temperature and output power, it is limited in measurement accuracy and sensitivity. [0004] Currently, using Er 3+ And Yb 3+ The ion double-doped boroaluminate crystal has been used as a gain medium to achieve high-performance laser operation in the 1.5-1.6 μm ba...

Claims

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Application Information

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IPC IPC(8): H01S3/16H01S3/094H01S3/08
Inventor 陈雨金黄艺东林炎富龚兴红黄建华罗遵度
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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