Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Corrosive chemical liquid used for corrosion of silicon magma on surface of silicon chip and corrosion method thereof

A technology of chemical etching and silicon wafer surface, which is applied in the field of chemical etching solution, can solve the problems that affect the normal production of SE batteries and cannot be processed, and achieve the effect of convenient preparation, low cost and easy reaction process

Active Publication Date: 2012-01-11
JA SOLAR +1
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of silicon paste printing to manufacture SE batteries is gradually pushed to mass production. However, when the silicon wafers have abnormalities in printing, abnormalities in diffusion rear resistance, and abnormalities after coating, there is no way to deal with these silicon wafers, resulting in a large number of Abnormal sheets that cannot be processed will affect the normal production of SE batteries, that is, once the above-mentioned problems or reworked sheets occur in the process of silicon wafer printing, diffusion or coating, they will not be processed and can only be scrapped. Research on silicon paste after printing, especially research on the invention of chemical etching solution for removing silicon paste after printing, diffusion or coating

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The chemical etching solution provided in this embodiment to etch the silicon slurry on the surface of the silicon wafer, the total volume of the chemical etching solution prepared according to needs is 8L, containing the following components in volume percentage: NH 4 F water solution 40% HF water solution 10% H 2 o 2 50%.

[0030] When etching the silicon slurry on the surface of the silicon wafer, proceed as follows:

[0031] (1) The total volume of the chemical corrosion solution prepared according to the needs is 8L, take 3.2L of NH with a mass percentage of 40% 4 F aqueous solution, 0.8L mass percentage content is 42% HF aqueous solution, 4L mass percentage content is 32% H 2 o 2 Aqueous solution, prepared as a chemical corrosion solution;

[0032] (2) diluting the chemical corrosion solution in step (1), specifically adding pure water according to the volume ratio of the chemical corrosion solution and pure water to 1:2.5, and diluting the chemical corrosio...

Embodiment 2

[0036] The chemical etching solution provided in this embodiment to etch the silicon slurry on the surface of the silicon wafer, the total volume of the chemical etching solution prepared according to the needs is 10L, containing the following components in volume percentage: NH 4 F aqueous solution 43%, HF aqueous solution 8%, H 2 o 2 49%.

[0037] When etching the silicon slurry on the surface of the silicon wafer, proceed as follows:

[0038] (1) The total volume of the chemical corrosion solution prepared according to the needs is 10L, take 4.3L of NH with a mass percentage of 41% 4 F aqueous solution, 0.8L mass percentage content is the HF aqueous solution of 40%, 4.9L mass percentage content is the H of 31% 2 o 2 Aqueous solution, prepared as a chemical corrosion solution;

[0039] (2) diluting the chemical etching solution in step (1), specifically adding pure water according to the volume ratio of the chemical etching solution and pure water at 1:1 to dilute the ...

Embodiment 3

[0043] The chemical etching solution provided in this embodiment to etch the silicon slurry on the surface of the silicon wafer, the total volume of the chemical etching solution prepared according to the needs is 10L, containing the following components in volume percentage: NH 4 F aqueous solution 42%, HF aqueous solution 10%, H 2 o2 48%. And 6g C10-C16 alkyl glycoside (Alkyl polyglycoside, APG).

[0044] When etching the silicon slurry on the surface of the silicon wafer, proceed as follows:

[0045] (1) The total volume of the chemical corrosion solution prepared according to the needs is 10L, take 4.2L of NH with a mass percentage of 42% 4 F aqueous solution, 1.0L mass percentage content is the HF aqueous solution of 41%, 4.8L mass percentage content is the H of 30% 2 o 2 Aqueous solution and 6g surfactant are prepared into chemical corrosion solution;

[0046] (2) diluting the chemical corrosion solution in step (1), specifically adding pure water according to the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses corrosive chemical liquid used for corrosion of silicon magma on the surface of silicon chips. The corrosive chemical liquid comprises the following components, by volume percentage, 40 to 43% of an aqueous solution of NH4F, 8 to 10% of an aqueous solution of HF and 48 to 52% of H2O2. The corrosive chemical liquid has a strong corrosion effect and a stable corrosion rate, and enables the goal of corroding silicon magma on the surface of silicon chips to be realized; preparation of the corrosive chemical liquid is convenient and has the advantage of strong repeatability; the invention also discloses a method of corroding silicon magma with the corrosive chemical liquid, and the method has the advantages of a simple process, easily controllable reaction process and low cost.

Description

technical field [0001] The invention relates to a chemical etching solution, in particular to a chemical etching solution for corroding silicon slurry on the surface of a silicon chip, and also relates to a method for using the chemical etching solution to corrode the silicon slurry printed on the surface of a silicon chip. Background technique [0002] As solar cells have higher and higher requirements for conversion efficiency, SE (Selective Emitter) cells have emerged. The use of silicon paste printing to manufacture SE batteries is gradually pushed to mass production. However, when the silicon wafers have abnormalities in printing, abnormalities in diffusion rear resistance, and abnormalities after coating, there is no way to deal with these silicon wafers, resulting in a large number of Abnormal sheets that cannot be processed will affect the normal production of SE batteries, that is, once the above-mentioned problems or reworked sheets occur in the process of silicon ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/24
Inventor 严金梅杨伟强王松
Owner JA SOLAR
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com