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Method and apparatus for silicon refinement

A metal silicon and silicon deposition technology, applied in the field of silicon refining, can solve problems such as the instability of alloy materials

Inactive Publication Date: 2012-01-18
ARISE TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be appreciated that where metal silicon alloys are used, significant operational disadvantages may be encountered, including the presence of crystallites in the alloy material 16 (e.g., where two phases are present in the alloy material), in the Inside and outside of the purification process, the instability of the alloy material

Method used

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  • Method and apparatus for silicon refinement
  • Method and apparatus for silicon refinement
  • Method and apparatus for silicon refinement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0108] The chlorination chamber with a diameter of 34 cm and a height of 50 cm was loaded with 25 pieces of silicon-copper alloy with a total weight of 12 kg and a silicon concentration of 30 wt% or 3.6 kg. Place the blocks equidistant in the center of the chlorination chamber. After proper evacuation and filling of the chamber with process gases, the chlorination chamber was connected to a Siemens type polysilicon deposition chamber. The pressure in the chamber is maintained above atmospheric pressure. The alloy is heated to a temperature of 300°C to 400°C and the process gas is circulated between the chlorination chamber and the deposition chamber in a closed loop system. The chlorosilanes (mainly trichlorosilane) already produced in the chlorination chamber are consumed in the deposition chamber, and the exhaust gas from the deposition process (especially rich in HCl and STC) is used to generate new chlorosilanes (by and silicon alloy Reaction). The gas was circulated fo...

Embodiment 2

[0110] 4 pieces of silicon-copper alloy (total weight 1.3 kg, silicon amount 390 g) were placed in a chlorination chamber with a diameter of 15 cm and a height of 25 cm. The alloy is heated by an external heating device and the process gas is circulated by an external diaphragm pump. In the deposition chamber, a silicon filament is placed, which is heated to 1100° C. and which consumes the chlorosilanes produced. The chlorination and deposition chambers have been constructed in a connected arrangement in which part of the filament heat is used to heat the silicon-copper alloy. The deposition chamber and the chlorination chamber were separated by an intermediate plate (constructed from a quartz disc and a copper plate). The central hole allows for good gas exchange. Metallurgical grade silicon with a purity of 99.3% has been used for alloy casting. Within 30 hours, 210 g of silicon had been deposited on the hot wire. According to GDMS measurements (average of two measuremen...

Embodiment 3

[0112]A 10 kg block of approximately 1 ccm size was placed in a chlorination chamber with a diameter of 34 cm and a height of 50 cm. Bulks have been formed from a copper-silicon alloy with a silicon concentration of 30%. In 38 hours, 2 kg of purified silicon was deposited on a 210x10 mm filament with a height of 34 cm. The deposition temperature was 1100°C. The results of the impurity analysis are listed in Table 1, "Run 3.2-17".

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Abstract

A method and respect material for the production of chlorosilanes (primarily: trichlorosilane) and the deposition of high purity poly-silicon from these chlorosilanes. The source for the chlorosilane production consists of eutectic or hypo-eutectic copper-silicon, the concentration range of said copper-silicon is between 10 and 16 wt% silicon. The eutectic or hypo-eutectic copper-silicon is cast in a shape suitable for a chlorination reactor, where it is exposed to a process gas, which consists, at least partially, of HCI. The gas reacts at the surface of the eutectic or hypo-eutectic copper-silicon and extracts silicon in the form of volatile chlorosilane. The depleted eutectic or hypo-eutectic material might be afterwards recycled in such a way that the amount of extracted silicon is replenished and the material is re-cast into the material shape desired.

Description

technical field [0001] The present invention relates to methods and apparatus for silicon refining. In particular, the present invention relates to methods and apparatus for producing chlorosilanes and depositing high purity silicon. Background technique [0002] Metallurgical grade silicon needs to be refined before it can be used in photovoltaic or semiconductor applications. Conventionally, this process is carried out in several steps carried out in series: In the first step, chlorosilanes or monosilanes are produced, such as TCS-trichlorosilane SiHCl3, STC-silicon tetrachloride SiCl4, dichlorosilane SiH2Cl2 , or monosilane SiH4, typically through a fluidized bed reactor, for example as described in US Patent Application Publication No. 2007 / 0086936A1. In the next step, the product gas is captured and purified by fractional distillation to remove gaseous metal chlorides, BCl3, PCl3, CH4, etc. High-purity chlorosilanes are then used as process gas in the so-called Sieme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/039C01B33/037
CPCC01B33/035C01B33/10742C01B33/10715C01B33/10773C01B33/10757C01B33/107C01B33/10747C01B33/1071C01B33/10721
Inventor 彼得·多德阿塔纳西奥斯·汤姆·巴尔科斯杰弗里·道金斯
Owner ARISE TECH CORP