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High-voltage LED (Light Emitting Diode) device and manufacturing method thereof

A technology of LED devices and manufacturing methods, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., and can solve the problems of current density crowding, power chip heat dissipation, etc.

Inactive Publication Date: 2013-06-19
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a manufacturing method for high-voltage LED devices to solve the local crowding effect of current density and the heat dissipation of power chips

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  • High-voltage LED (Light Emitting Diode) device and manufacturing method thereof

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Embodiment Construction

[0015] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0016] In the following description, many specific details are explained in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar popularizations without violating the connotation of the present invention. Therefore, the present invention is not limited by the specific implementation disclosed below.

[0017] Secondly, the present invention uses schematic diagrams for detailed description. When describing the embodiments of the present invention in detail, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and th...

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Abstract

The invention provides a manufacturing method of a high-voltage LED (Light Emitting Diode) device, which comprises the following steps of: providing a substrate, and sequentially forming an N-type limit layer, an epitaxial layer and a reflecting layer on the substrate; manufacturing at least one isolation trench on the substrate so as to isolate at least two regions on the substrate, and manufacturing a plurality of uniformly-distributed N-type through holes in each region; depositing insulation layers on the inner surfaces, except for bottoms, of the N-type through holes and the isolation trench and the surface of a part of reflection layer; depositing metal to form conductive bolts in the N-type through holes, forming a positive electrode conductive bump on the exposed partial reflection layer, and forming negative electrode conductive bumps which are connected with the conductive bolts in the single region, so as to form LED modules; and packaging one or more LED module(s) and a functional chip to form a high-voltage LED device. The invention also provides the high-voltage LED device, and the problems of current density local crowding effect and heat dissipation of a power-typechip are solved.

Description

Technical field [0001] The invention belongs to the field of light-emitting device manufacturing, and particularly relates to a high-voltage LED device and a manufacturing method thereof. Background technique [0002] With the development of nitride-based high-brightness light-emitting diode (Light Emitting Diode, LED) applications, a new generation of green and environmentally friendly solid-state lighting source nitride LED has become the focus of research, especially the third-generation semiconductor gallium nitride ( GaN) represents the development of blue LEDs. Group III nitride semiconductor materials based on gallium nitride (GaN), indium gallium nitride (InGaN) and aluminum gallium nitride (AlGaN) alloys have a wide direct band gap, high internal and external quantum efficiency, high thermal conductivity, and resistance to High temperature, corrosion resistance, shock resistance, high strength and high hardness are the ideal materials for manufacturing high-brightness l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L27/15H01L33/36H01L33/62
Inventor 肖德元张汝京
Owner ENRAYTEK OPTOELECTRONICS
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