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Method for optimizing negative differential conduction phenomenon in superconductor-graphene heterojunction

An optimization method and heterojunction technology, which are used in the manufacture/processing of superconductor devices, electrical digital data processing, special data processing applications, etc. , the effect of current size optimization

Inactive Publication Date: 2013-05-08
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Problems solved by technology

Most of the previous work discussed the DC Josephson effect under the applied bias voltage, and the AC effect was rarely discussed due to the time-dependent increase in its complexity.

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  • Method for optimizing negative differential conduction phenomenon in superconductor-graphene heterojunction
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  • Method for optimizing negative differential conduction phenomenon in superconductor-graphene heterojunction

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Embodiment Construction

[0025] The method of the present invention will be further described below in conjunction with the accompanying drawings.

[0026] Experimentally, superconductivity in graphene can be achieved by neighbor induction by first depositing mechanically exfoliated graphene onto Si(p++) / SiO 2 On the substrate, the Al / Ti grid voltage electrode is prepared by standard electron beam lithography and lift-off technology, and the carrier concentration in graphene is controlled by the back grid voltage. For specific calculation model details, please refer to figure 1 .

[0027] First write the DBdG equation in the Josephson heterojunction composed of superconductor-graphene-superconductor (SGS) where H=v F σ·p+U is the Hamiltonian in graphene, v F is the Fermi velocity in graphene, σ is the Pauli matrix, U is the gate pressure potential field, and the Hamiltonian for the propagation direction is in a complete basis Discretize H nn' =(U n σ 0 +E y σ y )δ n,n' -iE 0 σ x δ n',n...

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Abstract

The invention discloses a method for optimizing a negative differential conduction phenomenon in a superconductor-graphene heterojunction. The method comprises the following steps: firstly, drawing up a dirac equation in a Josephson junction and discretizing a Hamiltonian along a spreading direction; utilizing a Floquet theorem to unfold an alternating current effect generated by a bias in the junction in a form of a non-equilibrium Green function; utilizing self-energy items at two ends to solve Green functions at the two ends, thereby solving the Green function in a transmission area; respectively solving a direct current item and an alternating current item according to a current formula; and finally, adjusting grid voltage distribution according to requirements and optimizing the negative differential conduction phenomenon and current amplitude. The Green function has an advantage in treating a micro mechanism, so that interactions between electrons and phonons and between electrons and electrons are easily considered.

Description

technical field [0001] The invention relates to a method for optimizing the electrical properties of a superconductor-graphene heterojunction, in particular to a method for optimizing the negative differential conductance phenomenon in the superconductor-graphene heterojunction. The invention belongs to the application technical field of semiconductor photoelectric devices. Background technique [0002] Graphene is composed of a single layer of carbon atoms arranged in a hexagonal lattice structure, and it is a true two-dimensional material system. Graphene's unique material properties earned its discoverers the 2010 Nobel Prize in Physics. The unique electronic properties in graphene: linear dispersion relationship, singular quantum Hall effect, minimum conductivity, Klein tunneling, etc., are of great significance for exploring fundamental physics and studying potential applications. [0003] The problem of graphene in the interdisciplinary field is one of the research h...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50H01L39/24H10N60/01
Inventor 曹俊诚徐公杰伍滨和
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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