A polysilicon laser annealing method for thin film transistors
A thin-film transistor and laser annealing technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as uneven display and uneven striped display of organic light-emitting display panels
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0021] The laser annealing method of the low-temperature polysilicon comprises the following four steps:
[0022] 1. A substrate 1 is provided, and a buffer layer 4 is first formed on the substrate 1 by a low-pressure chemical vapor deposition (CVD) method, and then an amorphous silicon film 5 is deposited.
[0023] The substrate 1 is a glass substrate, and the buffer layer 4 is a structure composed of silicon dioxide and silicon nitride to prevent impurities in the substrate 1 from diffusing in subsequent processes and affecting the polysilicon film. The buffer layer 4 and the amorphous silicon film 5 Made by chemical vapor deposition.
[0024] 2. An excimer laser generator 2 is provided, which can emit a pulsed laser beam 3, and the pulsed laser beam 3 irradiates the amorphous silicon thin film 5 to form an irradiated area, so that the irradiated area is in a molten state;
[0025] After the amorphous silicon film 5 is deposited on the glass substrate 1, after dehydrogenati...
Embodiment 2
[0030] The difference between the present embodiment and the first embodiment is that the scanning pitch varies within the range of 0.9-1.1 times of the average scanning pitch, and the others are the same as the embodiment.
[0031] If the scanning spacing changes within the range of 0.9 to 1.1 times the average scanning spacing, and control the change between the next scanning spacing and the previous scanning spacing to not exceed 0.1 times the average scanning spacing. Assuming that the average scan pitch is 20um, the scan pitch values for the 1st to 8th times are 20um, 19um, 20um, 18um, 20um, 21um, 22um, 20um.
[0032]In the above embodiments, the scanning distance is only possible, and other values may be generated, as long as the scanning distance is changed within the range of 0.8 to 1.2 times of the set average scanning distance, and the scanning distance of the next time is controlled to be different from that of the previous time. It is sufficient that the differ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More