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Dual damascene manufacturing process for super-thick top-layer metal

A top-level metal and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of extending the process cycle, reducing costs, and shortening the cycle

Inactive Publication Date: 2012-04-18
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention discloses a double damascene manufacturing process for ultra-thick top layer metal, which is used to solve the problem that in the prior art, it is impossible to control the high aspect ratio of through hole etching and the through hole without increasing the process steps and prolonging the process cycle. The problem with size control

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  • Dual damascene manufacturing process for super-thick top-layer metal
  • Dual damascene manufacturing process for super-thick top-layer metal
  • Dual damascene manufacturing process for super-thick top-layer metal

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Embodiment Construction

[0024] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings:

[0025] A dual damascene manufacturing process for ultra-thick top metal, wherein a silicon wafer is deposited with multiple dielectric layers, the bottommost dielectric layer and the silicon wafer and between any two adjacent dielectric layers. There is a dielectric barrier layer between them, and a metal hard mask is deposited on the topmost dielectric layer; the number of layers of the dielectric layer and the dielectric barrier layer is determined according to the thickness of the ultra-thick top metal and process conditions. The number of layers of the electrical layer and the dielectric barrier layer is the same; spin-coating photoresist on the metal hard mask, and photolithography to form a trench pattern; dry etching, opening the metal hard mask, ashing to remove light resistance; spin-coating photoresist, photolithography to form thr...

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Abstract

The invention discloses a dual damascene manufacturing process for a super-thick top-layer metal. According to the dual damascene manufacturing process disclosed by the invention, the problems that the etched high aspect ratio and the size of a through hole cannot be controlled on the premise of no addition of process steps and no prolonging of the process period in the prior art are solved. A dielectric layer is subjected to dry method etching for multiple times, so that the quality of each etching is ensured, further the effective control over the high aspect ratio and the size of the through hole is realized, the production cost is reduced and the production period is shortened.

Description

technical field [0001] The invention relates to a double damascene manufacturing process, in particular to a metal mask double damascene manufacturing process for the first part of the trench of ultra-thick metal. Background technique [0002] Damascus process is a metal wire embedding process, generally refers to copper embedding process, because copper is not easy to etch, only by first engraving the required pattern, then embedding copper through electroplating processing (ECP) method, and finally chemical mechanical grinding (CMP) to grind off excess copper. [0003] For the manufacture of ultra-thick top metal, if the traditional double damascene manufacturing process is used, the depth of the trench is usually 3um or more, and the aspect ratio of the through hole exceeds 10:1. The etching process is difficult to achieve. [0004] The process steps in the prior art are: dielectric layer deposition, wherein, dielectric barrier layer: SIN, dielectric layer: SiO2; sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 姬峰李磊胡有存陈玉文张亮
Owner SHANGHAI HUALI MICROELECTRONICS CORP