Supercharge Your Innovation With Domain-Expert AI Agents!

Plasma processing apparatus

A plasma and treatment device technology, applied in the field of plasma treatment, can solve problems such as insufficient plasma treatment, and achieve the effects of plasma treatment, uniform plasma treatment, and wavelength suppression effects

Active Publication Date: 2012-04-18
TOKYO ELECTRON LTD
View PDF9 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the uniformity of the plasma density that can be obtained on the substrate is not sufficient for most plasma processes when only a normal RF antenna is used.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing apparatus
  • Plasma processing apparatus
  • Plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0092] The best mode for carrying out the present invention will be described below with reference to the drawings.

[0093] (The overall structure and function of the device)

[0094] figure 1 The configuration of an inductively coupled plasma processing apparatus according to an embodiment of the present invention is shown.

[0095] This plasma processing apparatus is configured as an inductively coupled plasma etching apparatus using a planar coil-shaped RF antenna, and includes, for example, a cylindrical vacuum chamber (processing container) 10 made of metal such as aluminum or stainless steel. Chamber 10 is safety grounded.

[0096] First, the structure of each part not related to plasma generation in this inductively coupled plasma etching apparatus will be described.

[0097] In the center of the lower part of the chamber 10, a disc-shaped susceptor 12 on which a substrate to be processed, such as a semiconductor wafer W, is placed is horizontally arranged. The susc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a plasma processing apparatus. In an inductive coupling type plasma processing apparatus, wavelength effect in RF antenna is totally restricted. Furthermore uniform plasma processing can be easily realized in a circumferential direction and a radial direction. A top wall part or a dielectric window (52) of the chamber is provided with the RF antenna (54) which generates inductive coupling in the chamber. The RF antenna (54) is provided with an annular inner coil (58) and an outer coil (62). The inner coil (58) comprises a single circular coil unit (60). The outer coil (62) comprises two semi-circular coil units (64(1)) and (64(2)) which are divided in a circumferential direction and form a circle integrally. Each coil unit (60), (64(1)) and (64(2)) are electrically connected with a high-frequency power supply part (66) parallelly.

Description

technical field [0001] The present invention relates to the technique of performing plasma processing on a substrate to be processed, in particular to an inductively coupled plasma processing device. Background technique [0002] In processes such as etching, deposition, oxidation, and sputtering in the manufacturing process of a semiconductor device or FPD (Flat Panel Display), plasma is often used in order to make a processing gas react well at a relatively low temperature. Conventionally, plasma generated by high-frequency discharge in the MHz region has been often used for such plasma treatment. Plasma emitted by high-frequency discharge is roughly classified into capacitively coupled plasma and inductively coupled plasma as more specific (device) plasma generating methods. [0003] Generally, an inductively coupled plasma processing apparatus has a dielectric window constituting at least a part of the wall of the processing container (for example, a top wall), and supp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46
CPCH01J37/3211H05H2001/4667H05H1/46H05H1/4652
Inventor 山泽阳平
Owner TOKYO ELECTRON LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com