Gallium nitride-based group III-V compound semiconductor LED epitaxial wafer and growing method thereof as well as LED device comprising gallium nitride-based group III-V compound semiconductor LED epitaxial wafer
A LED epitaxial wafer, gallium nitride-based technology, applied in crystal growth, semiconductor devices, chemical instruments and methods, etc., can solve the problem of low internal quantum efficiency, prone to DROOP efficiency, high-power GaN-based LEDs that have not been updated Good application and other issues to achieve the effect of increasing internal quantum effects, reducing DROOP effects, and strong electron binding capabilities
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Embodiment 1
[0051] The preparation method is as follows:
[0052] (1) The sapphire substrate is loaded into the reaction chamber, and the 2 Under the atmosphere of 1100℃, the substrate is heat-treated for 500s to remove the surface H 2 O and O 2, cool down to 600°C, pass NH 3 Perform nitriding treatment on the substrate for 100s-200s.
[0053] (2) The temperature is lowered to 550°C to grow a GaN buffer layer with a thickness of 25nm, and then the temperature is raised to 1050°C to recrystallize the GaN buffer layer.
[0054] (3) Raise the temperature to 1100°C, and continuously grow a 2.5 μm undoped gallium nitride layer (uGaN) on the GaN buffer layer; maintain the temperature, and continuously grow a 2.2 μm n-type n-type layer on the undoped gallium nitride layer Si-doped gallium nitride layer (n-GaN);
[0055] (4) The temperature drops to 920°C, and the flow rate is 2.26×10 -4 mol / min TMGa, flow 3.3 L / min NH 3 , SiH with very little flow 4 , grow a first barrier layer (First_Ba...
Embodiment 2
[0069] Preparation method: the same as in Example 1, wherein the step of growing the covering layer in step (6) is as follows:
[0070] Grow the pre-covered well layer: under the condition of pure nitrogen, keep the growth pressure at 300mbar, and the flow rate is 1.76×10 -5 mol / min of TEGa, feed flow of 33 l / min of NH 3 , the incoming flow is 5.7×10 -5 mol / min of TMIn to grow a pre-covered well layer with a thickness of 10 nm.
[0071] Growth of the pre-covered barrier layer: keep all conditions the same as the growth conditions of the pre-covered well layer, stop feeding TMIn and TEGa, and increase the growth temperature by 70°C, so as to bake off most of the In on the surface of the pre-covered well layer, thereby forming a thickness A pre-covered well layer with a thickness of 10 nm and a pre-covered barrier layer with a thickness of 4 nm were grown. The cycle period of the pre-covered well layer and the pre-covered barrier layer in the pre-covered layer is 2 periods. ...
Embodiment 3
[0073] Preparation method: the same as in Example 1, wherein the step of growing the covering layer in step (6) is as follows:
[0074] Grow the pre-covered well layer: under the condition of pure nitrogen, keep the growth pressure at 300mbar, and the flow rate is 1.76×10 -5 mol / min of TEGa, feed flow of 33 l / min of NH 3 , the incoming flow is 4.5×10 -5 mol / min of TMIn, to grow a pre-covered well layer with a thickness of 8 nm.
[0075] Growth of the pre-covered barrier layer: keep all conditions the same as the growth conditions of the pre-covered well layer, stop feeding TMIn and TEGa, and increase the growth temperature by 50°C, so as to bake off most of the In on the surface of the pre-covered well layer, thereby forming a thickness A pre-covered well layer with a thickness of 4 nm and a pre-covered barrier layer with a thickness of 4 nm are grown. The cycle period of the pre-covered well layer and the pre-covered barrier layer in the pre-covered layer is 2 periods.
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