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Circuit structure for reading orthogonal rotating current of Hall sensor

A Hall sensor and circuit structure technology, applied in logic circuits, electrical components, reliability improvement and modification, etc., can solve problems such as sensor signal interference, offset voltage cancellation, amplifier offset and noise

Inactive Publication Date: 2012-04-25
HUNAN SEEKSUNS OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the disadvantage of this method is that when mass production is carried out, due to the discreteness of the process, even if the consistency of shape and position is paid attention to, the characteristics of each Hall plate will be different, so the offset voltage cannot be completely determined. offset
In addition, since the signals of CMOS Hall sensors are generally weak, only on the order of tens to hundreds of microvolts, in order for the back-end circuit to recognize such a weak voltage, it needs to be amplified first, and the amplifier itself is also There will be offset and noise effects, which also interfere with the sensor signal

Method used

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  • Circuit structure for reading orthogonal rotating current of Hall sensor
  • Circuit structure for reading orthogonal rotating current of Hall sensor
  • Circuit structure for reading orthogonal rotating current of Hall sensor

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Embodiment Construction

[0010] Below in conjunction with accompanying drawing and specific embodiment the present invention will be described in further detail:

[0011] Such as image 3 As shown, a circuit structure for reading out the orthogonal rotating current of the Hall sensor includes a constant current source 101, two PMOS switches (102, 103), six NMOS switches (104, 105, 106, 107, 108 , 109), an amplifier 113 and a regular quadrilateral Hall plate 110, and grounds 111, 112 are the equivalent input offset and noise sources of the amplifier 113 (defined as VOSA). The eight MOS switches need to provide two-phase non-overlapping clocks to perform switch selection operations. The regular quadrilateral Hall plate 110 leads to a terminal at its four corners respectively, and two PMOS switches (102, 103) and two NMOS switches (104, 105 ), the constant current source 101 is connected to the other end of the two PMOS switches (102, 103), and the current is injected into the regular quadrilateral Hall...

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Abstract

The invention discloses a circuit structure for reading the orthogonal rotating current of a Hall sensor. The circuit structure comprises a constant current source, six N-channel metal oxide semiconductor (NMOS) switches, two P-channel metal oxide semiconductor (PMOS) switches, an amplifier and a square Hall disk, wherein the eight MOS switches can perform on / off selecting operation by providing two clocks which are not overlapped with each other; the square Hall disk leads out a terminal from four corners respectively; the terminals are connected with two PMOS switches and two NMOS switches respectively; the constant current source is connected with the other end of each of the two PMOS switches respectively; two ends of the residual four NMOS switches are connected with the four terminals of the Hall disk and two input ends of the amplifier respectively; and the generated Hall voltage signal is amplified by the amplifier. By the circuit structure, the offset voltage and noise can be combined with input offset and noise of the back-end amplifier, so that the next level of signal processing circuit can eliminate the offset voltage and the noise conveniently.

Description

technical field [0001] The invention relates to a circuit structure for Hall sensor current readout, more specifically a circuit structure for Hall sensor orthogonal rotation current readout. Background technique [0002] For the CMOS Hall sensor integrated circuit using the Hall plate structure, the influence of non-ideal factors such as the offset voltage of the Hall plate itself, temperature drift, and the noise of the CMOS process itself (such as 1 / f noise) will greatly reduce the impact of the sensor itself on the sensor. Sensitivity to magnetic field. Among them, the offset voltage of the Hall plate itself plays a major role. A common solution is to connect two or more Hall plates in parallel, but let the current directions injected into each other be perpendicular to each other. The offset voltage is canceled because changing the direction of the current only affects the polarity of the Hall plate's offset voltage, not the output signal voltage. But the disadvantag...

Claims

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Application Information

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IPC IPC(8): H03K19/094H03K19/003
Inventor 郭晓雷金湘亮夏宇张成彬
Owner HUNAN SEEKSUNS OPTOELECTRONICS TECH
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