Compound for wet etching silicon dioxide
A technology of silicon dioxide and wet etching, which is applied in the direction of surface etching compositions, chemical instruments and methods, electrical components, etc., can solve problems such as pollution particles, process temperature, transportation and storage problems, and use difficulties, and achieve reduction Effect of processing time, shortening processing time, and increasing productivity
Active Publication Date: 2012-05-09
SOULBRAIN CO LTD
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Problems solved by technology
There are many difficulties in use because solid phase segregation that occurs at a temperature of 20°C or higher causes problems in process temperature, transportation, and storage
Another problem is that since ammonium fluoride (NH 4 F) The sublimation properties of ammonium fluoride (NH 4 F) Solid phase segregation may contaminate particles
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[0028] An etchant containing the ingredients shown in Table 1 below and water was prepared. In Table 1, polyoxyethylene (C1-C20) alkylammonium sulfate was used as an anionic surfactant.
[0029]According to the etching process, when both the silicon dioxide wafer and the silicon nitride film are placed in a single type wet etching device, the etchant is introduced on the silicon dioxide for 10 seconds and on the silicon nitride film for 1 minute, Wherein the flow rate is 2 L / min, and the wafer is rotated at a rate of 200 rpm at the same time. Then rinse with deionized water and N 2 Spin dry.
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The invention provides an etching compound for selectively removing silicon dioxide at high etching rate, in particular, the compound for wet etching silicon dioxide contains the following materials by weight percent: 1-40 weight percent of hydrogen fluoride (HF), 5-40 weight percent of ammonium bifluoride (NH4HF2) and water, and further contains surface active agent to improve the selectivity of silicon dioxide and silicon nitride film. Since the compound for wet etching silicon dioxide has higher etching selectivity of silicon dioxide with respect to silicon nitride film, the compound can be used for selectively removing silicon dioxide.
Description
technical field [0001] The following disclosure relates to an etching composition for selectively removing silicon dioxide at a high etch rate, and in particular to a composition for wet etching silicon dioxide having a high etch selectivity relative to a silicon nitride film performance and is suitable for single-type wet etch processes on large substrates with high etch rate removal of silicon dioxide. Background technique [0002] Recently, a batch type is generally used instead of a single type in semiconductor cleaning processes. The method used by the individual type is to process wafers one by one, which has many advantages over the batch type. That is, the problem of particle re-attachment can be solved because new chemicals can be provided in each process and have no effect on other wafers. In addition, since the wafer is rotated while the rinsing process is in progress and does not move after the chemical treatment process, the chemical liquid can be well replace...
Claims
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IPC IPC(8): C09K13/08H01L21/311
Inventor 林廷训金大玹宇昌震朴成焕
Owner SOULBRAIN CO LTD
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