Method for pretreating copper surface
A pretreatment, copper surface technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of breakdown voltage not meeting test requirements, waiting time to increase the difficulty of wafer processing and production, etc., to achieve the ability to remove copper oxide Strong, long ion acceleration time, high ion velocity effect
Inactive Publication Date: 2012-05-09
SHANGHAI HUALI MICROELECTRONICS CORP
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figure 1 It is a schematic diagram of the interlayer breakdown voltage values of different waiting time wafers in the background technology of the present invention; as figure 1 As shown, by testing the interlayer breakdown voltage of different copper waiting times, it is found that with the increase of the waiting time, the breakdown voltage is constantly decreasing, and using the existing pretreatment method, when the waiting time is 4 hours, Its breakdown voltage can no longer meet the test requirements greater than 50V, that is, the maximum waiting time is less than 4 hours, and the shorter waiting time increases the difficulty in wafer processing and production
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[0023] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0024] Figure 2-6 It is a schematic structural flow diagram of a method for copper surface pretreatment of the present invention; as Figure 2-6 Shown, carry out copper double damascene structure interconnection process, the method for a kind of copper surface pretreatment of the present invention:
[0025] First, an interlayer dielectric layer is deposited on the substrate 11, and copper interconnection grooves are formed after photolithography and etching; metal copper 13 is deposited to fill the copper interconnection grooves and cover the remaining interlayer dielectric layer 12 on the upper surface, formed as figure 2 structure shown.
[0026] Secondly, a chemical mechanical polishing process is used to remove the metal copper 13 covering the upper surface of the remaining interlayer dielectric layer 12, so that the remaining copper 14 i...
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The invention relates to the field of semiconductor manufacturing and particularly relates to a method for pretreating the copper surface. In the method, a high-radio frequency and low-radio frequency hybrid power supply is used, the relative concentration of NH3 in the plasma reaction is correspondingly increased, and the pressure in a reaction environment is reduced, so that the average free path is relatively long when the reaction pressure is relatively low, and thus the ion accelerating time in the plasma is relatively long and the ion speed is relatively high, i.e. the copper oxide removing capability is relatively strong.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a copper surface pretreatment method. Background technique [0002] With the gradual reduction of the critical dimensions of semiconductors in integrated circuits and the continuous improvement of their integration, the interconnection material in the back stage has gradually transitioned from aluminum to copper; because copper has lower resistivity and higher resistance to electromigration than aluminum capability, therefore, it has been widely used in deep submicron technology. [0003] Nowadays, copper interconnection is widely used in the dual damascene structure process, but a dielectric layer with certain barrier properties needs to be used as the copper dielectric barrier layer. Before depositing the copper dielectric barrier layer, when the copper is exposed to the air for a long time, its surface will be oxidized to form copper oxide. Excessive copper oxide wi...
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Inventor 徐强张文广郑春生陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP