Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lithographic apparatus for transferring pattern from patterning device onto substrate, and damping method

A lithography equipment and pattern technology, applied in the direction of microlithography exposure equipment, photomechanical equipment, pattern surface photoplate making process, etc., can solve the problems of optical element position error, frame deformation, deterioration, etc.

Active Publication Date: 2012-05-16
ASML NETHERLANDS BV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This effect may be degraded due to the fact that the resonant frequency of the first frame can be close to the resonant frequency of other masses connected to the first frame via the support frame
As a result, the imaging performance of the lithographic apparatus is unsatisfactory
[0006] In addition, the movement of the first frame may cause deformation of the frame
Because the first frame is usually used to support the sensor used to measure the position of the optical element, deformation of these frames may cause the position error of the optical element, again leading to the degradation of the imaging performance of the lithographic apparatus

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus for transferring pattern from patterning device onto substrate, and damping method
  • Lithographic apparatus for transferring pattern from patterning device onto substrate, and damping method
  • Lithographic apparatus for transferring pattern from patterning device onto substrate, and damping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] figure 1 A lithographic apparatus according to an embodiment of the invention is schematically shown. The apparatus includes: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., ultraviolet (UV) radiation or any other suitable radiation); a patterning device support structure or a mask support structure (e.g., a mask stage) MT configured to support a patterning device (eg mask) MA and connected to a first positioning device PM configured to precisely position the patterning device according to specified parameters. The apparatus also includes a substrate table (e.g., wafer table) WT, or "substrate support," configured to hold a substrate (e.g., a resist-coated wafer) W and configured to A second positioner PW for precisely positioning the substrate is connected. The apparatus further comprises a projection system (e.g. a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a lithographic apparatus including a support frame which is supported by a base via a vibration isolation system; a projection system arranged to transfer a pattern from a patterning device onto a substrate, wherein the projection system includes a first frame which is spring-supported by the support frame; and an active damping system configured to damp movement of the first frame, including: a first sensor system configured to provide a first sensor output representative of absolute movement of the first frame, a first actuator system arranged to apply a force between the first frame and the support frame, and a control system configured to provide a drive signal to the first actuator system based on the first sensor output.

Description

technical field [0001] The invention relates to a lithographic apparatus for transferring a pattern from a patterning device onto a substrate and a damping method for a first frame of the apparatus. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the pattern is transferred via imaging onto a layer of radiation sensitive material (resist) provided on the substrate. . Typically, a single substrate will contain a network of adjacent target portions that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/70833G03F7/7085G03F7/709H01L21/0275
Inventor H·巴特勒M·H·H·奥德尼惠斯
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com