Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of graphene

A graphene and expanded graphite technology, applied in the field of organic semiconductor materials, can solve problems such as only yield and long reaction time

Active Publication Date: 2012-05-23
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF1 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphene synthesized by this method has high purity, but the reaction time is relatively long, and the yield is only 1% to 5%.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of graphene
  • Preparation method of graphene
  • Preparation method of graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A kind of preparation method of high-purity graphene, its technological process is as follows:

[0030] (1) Provide expandable graphite with an average diameter of 300 μm and a purity of 99%;

[0031] (2) The expandable graphite is fed into the mixed gas (5%H 2 and 95% Ar), heated to 800°C for 120s to form expanded graphite;

[0032] (3) The expanded graphite (1mg) in (2) is joined in the DMF solution of 20ml, is mixed with expanded graphite solution after ultrasonic 30min, and mixed solution is put into quartz reactor;

[0033] (4) Put the reactor in (3) into a microwave oven, adjust the power of the microwave to 600W, and heat at a temperature of 180° C. for 5 minutes.

[0034] (5) Cool the reactor to room temperature, and centrifuge at 600rpm for 120 minutes, filter out the black graphene precipitate, wash repeatedly with acetone and ethanol, and dry in a vacuum oven at 80°C to finally obtain high-purity graphene The final yield of graphene can reach 10-15%.

Embodiment 2

[0036] A kind of preparation method of high-purity graphene, its technological process is as follows:

[0037] (1) Provide expandable graphite with an average diameter of 500 μm and a purity of 99%;

[0038] (2) The expandable graphite is fed into the mixed gas (2%H 2 and 98% Ar), heated to 1200°C for 60s to form expanded graphite;

[0039] (3) The expanded graphite (1mg) in (2) is added to the pentafluorobenzonitrile (C 6 f 5 CN) solution, after ultrasonic 30min, be mixed with expanded graphite solution, the mixed solution is put into quartz reactor;

[0040] (4) Put the reaction kettle in (3) into a microwave oven, adjust the power of the microwave to 800W, and heat at a temperature of 300° C. for 15 minutes.

[0041] (5) Cool the reactor to room temperature, and ultrasonicate at a rate of 900rpm for 90 minutes, filter out the black graphene precipitate, wash repeatedly with acetone and ethanol, and dry in a vacuum oven at 100°C to finally obtain high-purity graphene Th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
The average diameteraaaaaaaaaa
The average diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of graphene. The preparation method comprises the following steps of heating expandable graphite in a protecting gas atmosphere, dissolving the heated expandable graphite in a solvent to obtain an expandable graphite solution, putting the expandable graphite solution into an enclosed container, carrying out microwave heating, and orderly carrying out cooling, centrifugation sedimentation and drying of the heated expandable graphite solution to obtain graphene. The preparation method of graphene has the advantages of low cost and high yield.

Description

【Technical field】 [0001] The invention belongs to the technical field of organic semiconductor materials, and in particular relates to a preparation method of graphene. 【Background technique】 [0002] Since Andre K. Geim (Andre K. Geim) of the University of Manchester in the United Kingdom prepared graphene materials in 2004, due to its unique structure and photoelectric properties, it has received widespread attention. Single-layer graphite is considered an ideal material due to its large specific surface area, excellent electrical and thermal conductivity, and low thermal expansion coefficient. Such as: ①High strength, Young's modulus, (1,100GPa), breaking strength: (125GPa); ②High thermal conductivity, (5,000W / mK); ③High electrical conductivity, carrier transport rate, (200,000cm 2 / V·s); ④ high specific surface area, (theoretical calculation value: 2,630m 2 / g). In particular, its high conductivity, large specific surface properties and its two-dimensional nanoscale s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04C01B32/19
Inventor 周明杰吴凤王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com