Stacked semiconductor device and method for manufacturing same

Abstract

A stacked semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate (101) and a plurality of layers of wafer modules located on the semiconductor substrate, wherein each layer of wafer module includes active components (100') and bonding components (200'), and the active component and the bonding component respectively comprises vertically aligned penetrating conductive passages (107, 203) with respect to each other, so that each layer of active components can be electrically connected to lower layer / upper layer of active components by way of the penetrating conductive passages.

Description

technical field [0001] The present invention relates to semiconductor devices and manufacturing methods thereof, and more particularly, to stacked semiconductor devices provided by through wafer vias (abbreviated as TWV) and a method for interconnecting semiconductor devices of different levels by using through wafer vias. Background technique [0002] An important development trend of semiconductor devices is to reduce the chip footprint of semiconductor devices. Using three-dimensional integration of semiconductor devices, that is, stacking multiple layers of semiconductor devices in the direction perpendicular to the wafer, can double the integration of devices, thereby achieving miniaturization and performance improvement of devices. [0003] Usually, through-vias are directly formed in the wafers at each level, so that stacked wafers are electrically and physically connected together using the through-vias. The manufacturing steps of the through-via include forming a t...

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Problems solved by technology

If the wafer is too thin, the mechanical strength is low, and it is easy to crack when transferred to the carrier; if the wafer is too thick, the aspect ratio of the through hole is too large, and it is difficult to completely etch and remove it in the etching step, and then in the final Open circuits in interconnections that can occur in semiconductor devices

[0005] Therefore, in the above-mentioned conventional three-dimensional integrated semiconductor devices, there are also problems of poor device reliability, low manufacturing yield, and stress concentration near the through channel, which affects the performance of the degraded device.

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