High-temperature vapor-water mixed jet cleaning system and method

A high-temperature water vapor and cleaning system technology, which is applied in cleaning methods and tools, chemical instruments and methods, cleaning methods using liquids, etc., can solve the problems of underlying silicon loss, damage to the sensitive structure of the wafer surface, etc., and achieve deglue efficiency Enhanced, loss-minimized, residue-free effect
CN102476108AInactive Publication Date: 2012-05-30INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2012-05-30
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

The invention discloses a cleaning system, which comprises an ozone generator, a deionized water storage tank, a control device, two nozzles and a cleaning chamber, wherein the control device is used for heating deionized water to a high temperature state; the outlet of the deionized water storage tank is connected with the nozzle inlet of one of the two nozzles through the control device; the outlet of the ozone generator is connected with the other nozzle inlet; and the outlets of the two nozzles are connected with the two inlets of the cleaning chamber respectively. The invention further discloses a cleaning method, which comprises the following steps of: forming vapor in a high-temperature state; jetting vapor and ozone to the cleaning chamber simultaneously; and cleaning a sample sheet with a mixed fluid consisting of high-temperature vapor and ozone. According to the cleaning system and the method disclosed by the invention, a thick inorganic carbonized layer, a bottom organic photoresist and cured and cross-linked SU-8 can be stripped fully, degumming efficiency is greatly increased, residues are eliminated, and the loss of a substrate material is minimized.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a high-temperature water vapor and ozone mixed jet cleaning system and method. Background technique

[0002] In modern CMOS devices, almost all substrate structures are formed via ion implantation. The energetic ions can damage the photoresist, making it difficult to remove. After implantation, these ions may exist as oxide layers, sub-oxide layers, or organic compounds. These energetic ions also transform the photoresist surface into a carbonaceous layer of diamond-type and graphite-type mixtures. The carbonization process therefore makes removal of implanted photoresist challenging. For the removal of implanted photoresist on silicon, alkaline or acidic fluorine-based solutions can be used, but it will cause loss of the underlying silicon; plasma removal technology can also be used, but the charge generated by the non-uniform plasma will damage the crystal. Sensitive...

Claims

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