7results about How to "Improve degumming efficiency" patented technology

The present application relates to a strain of Inhernia Bacillus and its application in ramie degumming, the strain is preserved in Guangdong Microbial Culture Collection Center on September 15, 2025, and the preservation number is GDMCC NO: 66966. When the strain is applied to ramie degumming, the degumming reaction can be carried out at a higher temperature, the degumming efficiency of ramie is effectively improved, the fiber is not damaged, the quality of the fiber is improved, and the strain has high application value in ramie degumming.

This invention relates to an integrated process apparatus and method for degumming Apocynum venetum, comprising a raw material pretreatment unit, a microwave-ultrasound synergistic pretreatment unit, a composite enzyme gradient degumming unit, a post-treatment unit, and an enzymatic hydrolysis product recovery unit connected in sequence. Each unit is connected via a sealed conveying mechanism. The invention also includes a central control system electrically connected to each unit to regulate its process parameters. A waste liquid conveying pipeline connects the composite enzyme gradient degumming unit and the enzymatic hydrolysis product recovery unit. The output of the enzymatic hydrolysis product recovery unit is connected to the composite enzyme gradient degumming unit via a reflux pipeline, enabling the recycling of biological enzymes. The method of this invention is simple, convenient to operate, and achieves good degumming effect. It yields high-quality Apocynum venetum fiber with high extraction rate, retains a large number of natural active ingredients, and realizes the high-value utilization of Apocynum venetum fiber.

The invention provides a low-toxicity environment-friendly neodymium-iron-boron magnet surface magnetic material glue removal liquid and a removal process. The removal liquid comprises the following components in parts by mass: 7 parts of dimethyl carbonate and 3 parts of acetone. The removal process comprises the following steps: S1, washing a to-be-treated magnet with deionized water and putting the to-be-treated magnet into a hollow tool basket; s2, removing liquid is added into an ultrasonic cleaning machine, the hollowed-out tool basket containing the to-be-treated magnet is completely immersed into the removing liquid, the ultrasonic cleaning machine is started to conduct degumming cleaning on the to-be-treated magnet to form a treated magnet, the degassing and frequency conversion functions of the ultrasonic cleaning machine are started, the ultrasonic frequency ranges from 35 kHz to 45 kHz, the ultrasonic power ranges from 300 W to 500 W, and the magnet to be treated is obtained; the cleaning time ranges from 15 min to 25 min, and the cleaning temperature ranges from 25 DEG C to 30 DEG C; s3, the treated magnet is washed with deionized water; and S4, drying treatment is conducted on the treated magnet through drying equipment. The degumming device can improve the degumming treatment efficiency.

The application provides a method for removing photoresist on a wafer and a semiconductor process device. In a process for removing photoresist after ion implantation, the spectrum intensity of the emission light generated by a specific element in the chamber at different sampling moments is obtained; the change characteristic quantity of the spectrum intensity at each sampling moment is determined according to the spectrum intensity corresponding to two adjacent sampling moments; when the change characteristic quantity corresponding to the current sampling moment meets a preset condition, it is determined that the hardening layer removal process is close to the end point, and the wafer is controlled to descend from the current position to the direction of the heating base according to a preset relationship to remove the hardening layer of the photoresist. By obtaining the spectrum intensity of the emission light generated by the specific element, whether the hardening layer removal process is close to the end point is determined according to whether the change characteristic quantity of the spectrum intensity meets the preset condition, and the wafer is controlled to descend for heating only when the hardening layer removal process is close to the end point, so that the hardening layer is prevented from bursting at high temperature.

The utility model relates to degumming device technical field discloses a rapeseed oil degumming device. Rapeseed oil crude oil passes through filter and enters preheater, the output of preheater is connected with the input of first static mixer, the output of first static mixer is connected with the feed port of acidification jar, the upper portion of first static mixer is connected with the acid inlet pipe, the bottom of acidification jar is provided with the discharge gate, the discharge gate of acidification jar is connected with the input of second static mixer, the upper portion of second static mixer is connected with hot water pipeline, the electric water heater is connected second static mixer through hot water pipeline, the output of second static mixer is connected with the feed port of hydration jar, the bottom of hydration jar is provided with the discharge gate, the discharge gate of hydration jar is communicated with the feed port of butterfly centrifuge, the light phase export is connected with the oil storage tank of external installation, the heavy phase export is connected with the oil foot jar of external installation. The utility model has solved the problem of uneven mixing, inaccurate control and low separation efficiency in traditional degumming process.

The present application relates to ramie degumming process technical field, specifically is a kind of acid-base synergic biological enzyme assisted ramie green degumming method, the method uses NaOH-H2SO4 Synergic treatment system, by acid dipping-alkali dipping two-step method synergistic effect, acid dipping stage is treated with 1%-5% H2SO4 Solution adding surfactant etc., alkali boiling stage is treated with 2%-6% NaOH solution adding sodium silicate etc., combined with biological enzyme auxiliary treatment, realize efficient degumming, the present application acid-base synergic biological enzyme assisted ramie green degumming method, gum removal rate is >90%, reduce 20%-30% alkali dosage, fiber breaking strength is increased by 20%-25%, wettability is significantly improved, residual glue rate is as low as 2% or less, and reduce production cost and wastewater treatment cost, adapt to existing production line, can satisfy high-end textile demand.

The invention provides a wafer photoresist removing method and a wafer photoresist removing device. The method comprises the following steps: putting a wafer into a high-temperature photoresist removing cavity, and performing photoresist removing for the first time; the wafer is transferred from the high-temperature photoresist removing cavity to a low-temperature photoresist removing cavity, secondary photoresist removing is carried out, and the temperature of the high-temperature photoresist removing cavity is higher than that of the low-temperature photoresist removing cavity; and transferring the wafer from the low-temperature photoresist removing cavity to a cooling cavity for cooling, wherein the temperature of the low-temperature photoresist removing cavity is higher than that of the cooling cavity.