Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of ruthenium metal sputtering target material

A metal sputtering and target technology, used in metal material coating process, sputtering coating, ion implantation coating and other directions, can solve the problem of poor control of grain uniformity, inability to prepare targets with net size, and operating costs High problems, to achieve the effect of shortening preparation time, short preparation cycle and low equipment price

Active Publication Date: 2013-11-13
GRIKIN ADVANCED MATERIALS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the traditional hot pressing method, due to the use of thermal radiation to heat the powder, there are disadvantages such as long preparation period and poor control of grain uniformity.
For the hot isostatic pressing method, it is necessary to cold press the powder and put the target blank into the package, and use the gas to hot press the target blank. The process is complicated, the preparation cycle is long, and the operating cost is high due to expensive equipment.
At the same time, neither of these two technologies can prepare targets with net size, which is not suitable for the production of precious metal targets.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of ruthenium metal sputtering target material
  • Preparation method of ruthenium metal sputtering target material
  • Preparation method of ruthenium metal sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～7

[0028] 1. Mix 3N5 high-purity ruthenium powder, put the powder into a high-purity graphite mold, and then perform a direct hot pressing process.

[0029] 2. The heating process is divided into two stages: the first stage is from room temperature to 1200°C, and the heating rate is 50°C·min -1 , keep warm for 10 minutes after reaching 1000°C; the second stage is from 1200°C to hot pressing temperature, and start to pressurize as the temperature rises, and the heating rate is 25°C·min -1 .

[0030] 3. After the temperature rises to the target temperature, the pressure will reach 35MPa, and then heat preservation and pressure preservation will start. The temperature at this stage is 1500-1650℃, and the heat preservation and pressure preservation time is 10-60min.

[0031] 4. The cooling speed should be controlled during the cooling process, and the cooling time should not be less than 30 minutes.

[0032] 5. After the hot pressing process, the target blank is machined and ground...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
oxygen contentaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a ruthenium metal sputtering target material. The preparation method prepares the ruthenium metal sputtering target material through a direct hot pressing method, the hot pressing temperature is 1400DEG C to 1700DEG C, the pressure is 35MPa, and the heat and pressure preservation time is 10min to 60min. The density of the ruthenium metal target material which is prepared through the method can reach above 98 percent, the average grain size is below 20mu m, and the oxygen content can reach below 200ppm.

Description

technical field [0001] The invention relates to a preparation method of a ruthenium metal sputtering target, in particular to a preparation method of a refractory noble metal target, and belongs to the field of hard disk perpendicular magnetic recording materials. Background technique [0002] At present, ruthenium metal sputtering target has become one of the important raw materials in the multilayer film structure of perpendicular magnetic recording. It is usually used as an intermediate layer in magnetic recording media, mainly to reduce the lattice mismatch stress between the upper and lower layers, increase Thermal stability and noise reduction. [0003] Ruthenium metal targets are usually prepared by traditional hot pressing (HP) and hot isostatic pressing (HIP) methods. For the traditional hot pressing method, due to the use of heat radiation to heat the powder, there are disadvantages such as long preparation period and poor control of grain uniformity. For the hot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/14C23C14/14C23C14/34
Inventor 罗俊锋丁照崇何金江王欣平江轩
Owner GRIKIN ADVANCED MATERIALS
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com